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Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.

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Chicago
Modak, Prasanta, Mark D’Hondt, and Ingrid Moerman. “Development of InAlGaP-materials on Ge-substrates for Red Light Emitters, Using a Safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.”
APA
Modak, P., D’Hondt, M., & Moerman, I. (n.d.). Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.
Vancouver
1.
Modak P, D’Hondt M, Moerman I. Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.
MLA
Modak, Prasanta, Mark D’Hondt, and Ingrid Moerman. “Development of InAlGaP-materials on Ge-substrates for Red Light Emitters, Using a Safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.” n. pag. Print.
@misc{129392,
  author       = {Modak, Prasanta and D'Hondt, Mark and Moerman, Ingrid},
  language     = {eng},
  title        = {Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process 1ste Doctoraatssymposium FTW, December 5, 2000, Gent, Belgium.},
}