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AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.

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Chicago
Modak, Prasanta, Mark D’Hondt, Danaë Delbeke, Ingrid Moerman, Roel Baets, Peter Van Daele, Piet Demeester, and P MIJLEMANS. 2000. “AlGaInP Microcavity Light-emitting Diodes at 650 Nm on Ge Substrates.” Ieee Photonics Technology Letters 12 (8): 957–959.
APA
Modak, P., D’Hondt, M., Delbeke, D., Moerman, I., Baets, R., Van Daele, P., Demeester, P., et al. (2000). AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates. IEEE PHOTONICS TECHNOLOGY LETTERS, 12(8), 957–959.
Vancouver
1.
Modak P, D’Hondt M, Delbeke D, Moerman I, Baets R, Van Daele P, et al. AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates. IEEE PHOTONICS TECHNOLOGY LETTERS. 2000;12(8):957–9.
MLA
Modak, Prasanta, Mark D’Hondt, Danaë Delbeke, et al. “AlGaInP Microcavity Light-emitting Diodes at 650 Nm on Ge Substrates.” IEEE PHOTONICS TECHNOLOGY LETTERS 12.8 (2000): 957–959. Print.
@article{129384,
  author       = {Modak, Prasanta and D'Hondt, Mark and Delbeke, Dana{\"e} and Moerman, Ingrid and Baets, Roel and Van Daele, Peter and Demeester, Piet and MIJLEMANS, P},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  language     = {eng},
  number       = {8},
  pages        = {957--959},
  title        = {AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.},
  volume       = {12},
  year         = {2000},
}

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