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Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls.

(2000) JOURNAL OF PHYSICS-CONDENSED MATTER. 12(49). p.10213-10221
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Chicago
FARVACAQUE, JL, Zahia Bougrioua, and Ingrid Moerman. 2000. “Theoretical Simulation of Free Carrier Mobility Collapse in GaN in Terms of Dislocation Walls.” Journal of Physics-condensed Matter 12 (49): 10213–10221.
APA
FARVACAQUE, J., Bougrioua, Z., & Moerman, I. (2000). Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls. JOURNAL OF PHYSICS-CONDENSED MATTER, 12(49), 10213–10221.
Vancouver
1.
FARVACAQUE J, Bougrioua Z, Moerman I. Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls. JOURNAL OF PHYSICS-CONDENSED MATTER. 2000;12(49):10213–21.
MLA
FARVACAQUE, JL, Zahia Bougrioua, and Ingrid Moerman. “Theoretical Simulation of Free Carrier Mobility Collapse in GaN in Terms of Dislocation Walls.” JOURNAL OF PHYSICS-CONDENSED MATTER 12.49 (2000): 10213–10221. Print.
@article{129300,
  author       = {FARVACAQUE, JL and Bougrioua, Zahia and Moerman, Ingrid},
  issn         = {0953-8984},
  journal      = {JOURNAL OF PHYSICS-CONDENSED MATTER},
  language     = {eng},
  number       = {49},
  pages        = {10213--10221},
  title        = {Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls.},
  volume       = {12},
  year         = {2000},
}

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