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Material optimisation for AlGaN/GaN HFET applications.

(2001) JOURNAL OF CRYSTAL GROWTH. 230(3-4). p.573-578
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MLA
Bougrioua, Zahia, Ingrid Moerman, N SHARMA, et al. “Material Optimisation for AlGaN/GaN HFET Applications.” JOURNAL OF CRYSTAL GROWTH 230.3-4 (2001): 573–578. Print.
APA
Bougrioua, Z., Moerman, I., SHARMA, N., WALLIS, R., Cheyns, J., Jacobs, K., THRUSH, E., et al. (2001). Material optimisation for AlGaN/GaN HFET applications. JOURNAL OF CRYSTAL GROWTH, 230(3-4), 573–578.
Chicago author-date
Bougrioua, Zahia, Ingrid Moerman, N SHARMA, RH WALLIS, Jan Cheyns, Koen Jacobs, EJ THRUSH, et al. 2001. “Material Optimisation for AlGaN/GaN HFET Applications.” Journal of Crystal Growth 230 (3-4): 573–578.
Chicago author-date (all authors)
Bougrioua, Zahia, Ingrid Moerman, N SHARMA, RH WALLIS, Jan Cheyns, Koen Jacobs, EJ THRUSH, L CONSIDINE, R BEANLAND, JL FARVACQUE, and C HUMPHREYS. 2001. “Material Optimisation for AlGaN/GaN HFET Applications.” Journal of Crystal Growth 230 (3-4): 573–578.
Vancouver
1.
Bougrioua Z, Moerman I, SHARMA N, WALLIS R, Cheyns J, Jacobs K, et al. Material optimisation for AlGaN/GaN HFET applications. JOURNAL OF CRYSTAL GROWTH. 2001;230(3-4):573–8.
IEEE
[1]
Z. Bougrioua et al., “Material optimisation for AlGaN/GaN HFET applications.,” JOURNAL OF CRYSTAL GROWTH, vol. 230, no. 3–4, pp. 573–578, 2001.
@article{129157,
  author       = {Bougrioua, Zahia and Moerman, Ingrid and SHARMA, N and WALLIS, RH and Cheyns, Jan and Jacobs, Koen and THRUSH, EJ and CONSIDINE, L and BEANLAND, R and FARVACQUE, JL and HUMPHREYS, C},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {3-4},
  pages        = {573--578},
  title        = {Material optimisation for AlGaN/GaN HFET applications.},
  volume       = {230},
  year         = {2001},
}

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