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On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions : an electrochemical study

Antoon Theuwis and Inge Vermeir
(1999) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 146(3). p.1172-1180
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MLA
Theuwis, Antoon, and Inge Vermeir. “On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in Alkaline K3Fe(CN)(6) Solutions : An Electrochemical Study.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 3, 1999, pp. 1172–80.
APA
Theuwis, A., & Vermeir, I. (1999). On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions : an electrochemical study. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1172–1180.
Chicago author-date
Theuwis, Antoon, and Inge Vermeir. 1999. “On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in Alkaline K3Fe(CN)(6) Solutions : An Electrochemical Study.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (3): 1172–80.
Chicago author-date (all authors)
Theuwis, Antoon, and Inge Vermeir. 1999. “On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in Alkaline K3Fe(CN)(6) Solutions : An Electrochemical Study.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (3): 1172–1180.
Vancouver
1.
Theuwis A, Vermeir I. On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions : an electrochemical study. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(3):1172–80.
IEEE
[1]
A. Theuwis and I. Vermeir, “On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions : an electrochemical study,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 3, pp. 1172–1180, 1999.
@article{124507,
  author       = {{Theuwis, Antoon and Vermeir, Inge}},
  issn         = {{0013-4651}},
  journal      = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{1172--1180}},
  title        = {{On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions : an electrochemical study}},
  volume       = {{146}},
  year         = {{1999}},
}
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