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On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions - An electrochemical study.

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Chicago
Theuwis, Antoon, and Inge Vermeir. 1999. “On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 Vs. InP in Alkaline K3Fe(CN)(6) Solutions - An Electrochemical Study.” Journal of the Electrochemical Society 146 (3): 1172–1180.
APA
Theuwis, A., & Vermeir, I. (1999). On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions - An electrochemical study. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1172–1180.
Vancouver
1.
Theuwis A, Vermeir I. On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions - An electrochemical study. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(3):1172–80.
MLA
Theuwis, Antoon, and Inge Vermeir. “On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 Vs. InP in Alkaline K3Fe(CN)(6) Solutions - An Electrochemical Study.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146.3 (1999): 1172–1180. Print.
@article{124507,
  author       = {Theuwis, Antoon and Vermeir, Inge},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {3},
  pages        = {1172--1180},
  title        = {On the selective etching of In0.53Ga0.47As and In0.72Ga0.28As0.61P0.39 vs. InP in alkaline K3Fe(CN)(6) solutions - An electrochemical study.},
  volume       = {146},
  year         = {1999},
}

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