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Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements.

(2000) JOURNAL OF APPLIED PHYSICS. 87(8). p.3674-3677
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Chicago
COECK, M, Nathalie Balcaen, T VAN HOECKE, Bartel Van Waeyenberge, Danny Segers, Charles Dauwe, and C LAERMANS. 2000. “Defects in Neutron Transmutation Doped Silicon Studied by Positron Annihilation Lifetime Measurements.” Journal of Applied Physics 87 (8): 3674–3677.
APA
COECK, M., Balcaen, N., VAN HOECKE, T., Van Waeyenberge, B., Segers, D., Dauwe, C., & LAERMANS, C. (2000). Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements. JOURNAL OF APPLIED PHYSICS, 87(8), 3674–3677.
Vancouver
1.
COECK M, Balcaen N, VAN HOECKE T, Van Waeyenberge B, Segers D, Dauwe C, et al. Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements. JOURNAL OF APPLIED PHYSICS. 2000;87(8):3674–7.
MLA
COECK, M, Nathalie Balcaen, T VAN HOECKE, et al. “Defects in Neutron Transmutation Doped Silicon Studied by Positron Annihilation Lifetime Measurements.” JOURNAL OF APPLIED PHYSICS 87.8 (2000): 3674–3677. Print.
@article{124040,
  author       = {COECK, M and Balcaen, Nathalie and VAN HOECKE, T and Van Waeyenberge, Bartel and Segers, Danny and Dauwe, Charles and LAERMANS, C},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {8},
  pages        = {3674--3677},
  title        = {Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements.},
  volume       = {87},
  year         = {2000},
}

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