Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements.
- Author
- M COECK, Nathalie Balcaen, T VAN HOECKE, Bartel Van Waeyenberge (UGent) , Danny Segers (UGent) , Charles Dauwe (UGent) and C LAERMANS
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-124040
- MLA
- COECK, M., et al. “Defects in Neutron Transmutation Doped Silicon Studied by Positron Annihilation Lifetime Measurements.” JOURNAL OF APPLIED PHYSICS, vol. 87, no. 8, 2000, pp. 3674–77.
- APA
- COECK, M., Balcaen, N., VAN HOECKE, T., Van Waeyenberge, B., Segers, D., Dauwe, C., & LAERMANS, C. (2000). Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements. JOURNAL OF APPLIED PHYSICS, 87(8), 3674–3677.
- Chicago author-date
- COECK, M, Nathalie Balcaen, T VAN HOECKE, Bartel Van Waeyenberge, Danny Segers, Charles Dauwe, and C LAERMANS. 2000. “Defects in Neutron Transmutation Doped Silicon Studied by Positron Annihilation Lifetime Measurements.” JOURNAL OF APPLIED PHYSICS 87 (8): 3674–77.
- Chicago author-date (all authors)
- COECK, M, Nathalie Balcaen, T VAN HOECKE, Bartel Van Waeyenberge, Danny Segers, Charles Dauwe, and C LAERMANS. 2000. “Defects in Neutron Transmutation Doped Silicon Studied by Positron Annihilation Lifetime Measurements.” JOURNAL OF APPLIED PHYSICS 87 (8): 3674–3677.
- Vancouver
- 1.COECK M, Balcaen N, VAN HOECKE T, Van Waeyenberge B, Segers D, Dauwe C, et al. Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements. JOURNAL OF APPLIED PHYSICS. 2000;87(8):3674–7.
- IEEE
- [1]M. COECK et al., “Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements.,” JOURNAL OF APPLIED PHYSICS, vol. 87, no. 8, pp. 3674–3677, 2000.
@article{124040, author = {{COECK, M and Balcaen, Nathalie and VAN HOECKE, T and Van Waeyenberge, Bartel and Segers, Danny and Dauwe, Charles and LAERMANS, C}}, issn = {{0021-8979}}, journal = {{JOURNAL OF APPLIED PHYSICS}}, language = {{eng}}, number = {{8}}, pages = {{3674--3677}}, title = {{Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements.}}, volume = {{87}}, year = {{2000}}, }