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A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy.

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Chicago
ZHU, SY, Christophe Detavernier, Roland Vanmeirhaeghe, XP QU, GP RU, Felix Cardon, and BZ LI. 2000. “A BEEM Study of Schottky Barrier Height Distributions of Ultrathin CoSi2/n-Si(100) Formed by Solid Phase Epitaxy.” Semiconductor Science and Technology 15 (4): 349–356.
APA
ZHU, SY, Detavernier, C., Vanmeirhaeghe, R., QU, X., RU, G., Cardon, F., & LI, B. (2000). A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15(4), 349–356.
Vancouver
1.
ZHU S, Detavernier C, Vanmeirhaeghe R, QU X, RU G, Cardon F, et al. A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2000;15(4):349–56.
MLA
ZHU, SY, Christophe Detavernier, Roland Vanmeirhaeghe, et al. “A BEEM Study of Schottky Barrier Height Distributions of Ultrathin CoSi2/n-Si(100) Formed by Solid Phase Epitaxy.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 15.4 (2000): 349–356. Print.
@article{123836,
  author       = {ZHU, SY and Detavernier, Christophe and Vanmeirhaeghe, Roland and QU, XP and RU, GP and Cardon, Felix and LI, BZ},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {4},
  pages        = {349--356},
  title        = {A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy.},
  volume       = {15},
  year         = {2000},
}

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