Advanced search
Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
SIMOEN, E, C CLAEYS, VB NEIMASH, A KRAITCHINSKII, N KRASKO, O PUZENKO, Anja Blondeel, and Paul Clauws. 2000. “Tin-related Deep Levels in Proton-irradiated N-type Silicon.” In Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys, 147–156.
APA
SIMOEN, E., CLAEYS, C., NEIMASH, V., KRAITCHINSKII, A., KRASKO, N., PUZENKO, O., Blondeel, A., et al. (2000). Tin-related deep levels in proton-irradiated n-type silicon. Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys (pp. 147–156).
Vancouver
1.
SIMOEN E, CLAEYS C, NEIMASH V, KRAITCHINSKII A, KRASKO N, PUZENKO O, et al. Tin-related deep levels in proton-irradiated n-type silicon. Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys. 2000. p. 147–56.
MLA
SIMOEN, E, C CLAEYS, VB NEIMASH, et al. “Tin-related Deep Levels in Proton-irradiated N-type Silicon.” Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys. 2000. 147–156. Print.
@inproceedings{123799,
  author       = {SIMOEN, E and CLAEYS, C and NEIMASH, VB and KRAITCHINSKII, A and KRASKO, N and PUZENKO, O and Blondeel, Anja and Clauws, Paul},
  booktitle    = {Proceedings 2nd ENDEASD Workshop, Kista-Stockholm, Sweden 2000, Editor C.L. Claeys},
  language     = {eng},
  pages        = {147--156},
  title        = {Tin-related deep levels in proton-irradiated n-type silicon.},
  year         = {2000},
}