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Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.

GP RU, XP QU, SY ZHU, BZ LI, Christophe Detavernier UGent, Roland Vanmeirhaeghe, Felix Cardon, RA DONATON and K MAEX (2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 18(4) 1942-1948).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
volume
18
issue
4) 1942-1948
Web of Science type
Article
Web of Science id
000088834400022
ISSN
1071-1023
language
English
UGent publication?
yes
classification
A1
id
123788
handle
http://hdl.handle.net/1854/LU-123788
date created
2004-01-14 13:36:00
date last changed
2016-12-19 15:38:06
@article{123788,
  author       = {RU, GP and QU, XP and ZHU, SY and LI, BZ and Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix and DONATON, RA and MAEX, K},
  issn         = {1071-1023},
  journal      = {JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY B},
  language     = {eng},
  number       = {4) 1942-1948},
  title        = {Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.},
  volume       = {18},
  year         = {2000},
}

Chicago
RU, GP, XP QU, SY ZHU, BZ LI, Christophe Detavernier, Roland Vanmeirhaeghe, Felix Cardon, RA DONATON, and K MAEX. 2000. “Ion-bombardment Effects on PtSi/n-Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy.” Journal of Vacuum Science & Technology B 18 (4) 1942-1948).
APA
RU, G., QU, X., ZHU, S., LI, B., Detavernier, C., Vanmeirhaeghe, R., Cardon, F., et al. (2000). Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18(4) 1942-1948).
Vancouver
1.
RU G, QU X, ZHU S, LI B, Detavernier C, Vanmeirhaeghe R, et al. Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2000;18(4) 1942-1948).
MLA
RU, GP, XP QU, SY ZHU, et al. “Ion-bombardment Effects on PtSi/n-Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy.” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18.4) 1942-1948 (2000): n. pag. Print.