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Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon.

Olivier De Gryse and Paul Clauws (2000) JOURNAL OF APPLIED PHYSICS. 87(7). p.3294-3300
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
87
issue
7
pages
3294-3300 pages
Web of Science type
Article
Web of Science id
000085878100017
ISSN
0021-8979
language
English
UGent publication?
yes
classification
A1
id
123740
handle
http://hdl.handle.net/1854/LU-123740
date created
2004-01-14 13:36:00
date last changed
2016-12-19 15:37:27
@article{123740,
  author       = {De Gryse, Olivier and Clauws, Paul},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {7},
  pages        = {3294--3300},
  title        = {Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon.},
  volume       = {87},
  year         = {2000},
}

Chicago
De Gryse, Olivier, and Paul Clauws. 2000. “Quantification of the Low Temperature Infrared Vibrational Modes from Interstitial Oxygen in Silicon.” Journal of Applied Physics 87 (7): 3294–3300.
APA
De Gryse, Olivier, & Clauws, P. (2000). Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon. JOURNAL OF APPLIED PHYSICS, 87(7), 3294–3300.
Vancouver
1.
De Gryse O, Clauws P. Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon. JOURNAL OF APPLIED PHYSICS. 2000;87(7):3294–300.
MLA
De Gryse, Olivier, and Paul Clauws. “Quantification of the Low Temperature Infrared Vibrational Modes from Interstitial Oxygen in Silicon.” JOURNAL OF APPLIED PHYSICS 87.7 (2000): 3294–3300. Print.