
Behavior of electrons in a dual-magnetron sputter deposition system: a Monte Carlo model
- Author
- M Yusupov, E Bultinck, Diederik Depla (UGent) and A Bogaerts
- Organization
- Abstract
- A Monte Carlo model has been developed for investigating the electron behavior in a dual-magnetron sputter deposition system. To describe the three-dimensional (3D) geometry, different reference frames, i.e. a local and a global coordinate system, were used. In this study, the influence of both closed and mirror magnetic field configurations on the plasma properties is investigated. In the case of a closed magnetic field configuration, the calculated electron trajectories show that if an electron is emitted in (or near) the center of the cathode, where the influence of the magnetic field is low, it is able to travel from one magnetron to the other. On the other hand, when an electron is created at the race track area, it is more or less trapped in the strong magnetic field and cannot easily escape to the second magnetron region. In the case of a mirror magnetic field configuration, irrespective of where the electron is emitted from the cathode, it cannot travel from one magnetron to the other because the magnetic field lines guide the electron to the substrate. Moreover, the electron density and electron impact ionization rate have been calculated and studied in detail for both configurations.
- Keywords
- PRESSURE, TRANSPORT, SIMULATION, COMBINATORIAL, DISCHARGE, FIELD, EPITAXIAL-GROWTH, UNBALANCED MAGNETRON, THIN-FILMS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1235884
- MLA
- Yusupov, M., et al. “Behavior of Electrons in a Dual-Magnetron Sputter Deposition System: A Monte Carlo Model.” NEW JOURNAL OF PHYSICS, vol. 13, 2011, doi:10.1088/1367-2630/13/3/033018.
- APA
- Yusupov, M., Bultinck, E., Depla, D., & Bogaerts, A. (2011). Behavior of electrons in a dual-magnetron sputter deposition system: a Monte Carlo model. NEW JOURNAL OF PHYSICS, 13. https://doi.org/10.1088/1367-2630/13/3/033018
- Chicago author-date
- Yusupov, M, E Bultinck, Diederik Depla, and A Bogaerts. 2011. “Behavior of Electrons in a Dual-Magnetron Sputter Deposition System: A Monte Carlo Model.” NEW JOURNAL OF PHYSICS 13. https://doi.org/10.1088/1367-2630/13/3/033018.
- Chicago author-date (all authors)
- Yusupov, M, E Bultinck, Diederik Depla, and A Bogaerts. 2011. “Behavior of Electrons in a Dual-Magnetron Sputter Deposition System: A Monte Carlo Model.” NEW JOURNAL OF PHYSICS 13. doi:10.1088/1367-2630/13/3/033018.
- Vancouver
- 1.Yusupov M, Bultinck E, Depla D, Bogaerts A. Behavior of electrons in a dual-magnetron sputter deposition system: a Monte Carlo model. NEW JOURNAL OF PHYSICS. 2011;13.
- IEEE
- [1]M. Yusupov, E. Bultinck, D. Depla, and A. Bogaerts, “Behavior of electrons in a dual-magnetron sputter deposition system: a Monte Carlo model,” NEW JOURNAL OF PHYSICS, vol. 13, 2011.
@article{1235884, abstract = {{A Monte Carlo model has been developed for investigating the electron behavior in a dual-magnetron sputter deposition system. To describe the three-dimensional (3D) geometry, different reference frames, i.e. a local and a global coordinate system, were used. In this study, the influence of both closed and mirror magnetic field configurations on the plasma properties is investigated. In the case of a closed magnetic field configuration, the calculated electron trajectories show that if an electron is emitted in (or near) the center of the cathode, where the influence of the magnetic field is low, it is able to travel from one magnetron to the other. On the other hand, when an electron is created at the race track area, it is more or less trapped in the strong magnetic field and cannot easily escape to the second magnetron region. In the case of a mirror magnetic field configuration, irrespective of where the electron is emitted from the cathode, it cannot travel from one magnetron to the other because the magnetic field lines guide the electron to the substrate. Moreover, the electron density and electron impact ionization rate have been calculated and studied in detail for both configurations.}}, articleno = {{033018}}, author = {{Yusupov, M and Bultinck, E and Depla, Diederik and Bogaerts, A}}, issn = {{1367-2630}}, journal = {{NEW JOURNAL OF PHYSICS}}, keywords = {{PRESSURE,TRANSPORT,SIMULATION,COMBINATORIAL,DISCHARGE,FIELD,EPITAXIAL-GROWTH,UNBALANCED MAGNETRON,THIN-FILMS}}, language = {{eng}}, pages = {{17}}, title = {{Behavior of electrons in a dual-magnetron sputter deposition system: a Monte Carlo model}}, url = {{http://dx.doi.org/10.1088/1367-2630/13/3/033018}}, volume = {{13}}, year = {{2011}}, }
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