The influence of Pt redistribution on Ni1-xPtxSi growth properties
- Author
- J Demeulemeester, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen (UGent) , Christophe Detavernier (UGent) , K Temst and A Vantomme
- Organization
- Keywords
- RUTHERFORD BACKSCATTERING DATA, NI-SI SYSTEM, THIN-FILMS, REACTIVE DIFFUSION, PHASE-FORMATION, THERMAL-STABILITY, MECHANISMS, ALGORITHM, EXPANSION, ELEMENTS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1226873
- MLA
- Demeulemeester, J., et al. “The Influence of Pt Redistribution on Ni1-XPtxSi Growth Properties.” JOURNAL OF APPLIED PHYSICS, vol. 108, no. 4, 2010, doi:10.1063/1.3455873.
- APA
- Demeulemeester, J., Smeets, D., Comrie, C., Van Bockstael, C., Knaepen, W., Detavernier, C., … Vantomme, A. (2010). The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS, 108(4). https://doi.org/10.1063/1.3455873
- Chicago author-date
- Demeulemeester, J, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen, Christophe Detavernier, K Temst, and A Vantomme. 2010. “The Influence of Pt Redistribution on Ni1-XPtxSi Growth Properties.” JOURNAL OF APPLIED PHYSICS 108 (4). https://doi.org/10.1063/1.3455873.
- Chicago author-date (all authors)
- Demeulemeester, J, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen, Christophe Detavernier, K Temst, and A Vantomme. 2010. “The Influence of Pt Redistribution on Ni1-XPtxSi Growth Properties.” JOURNAL OF APPLIED PHYSICS 108 (4). doi:10.1063/1.3455873.
- Vancouver
- 1.Demeulemeester J, Smeets D, Comrie C, Van Bockstael C, Knaepen W, Detavernier C, et al. The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS. 2010;108(4).
- IEEE
- [1]J. Demeulemeester et al., “The influence of Pt redistribution on Ni1-xPtxSi growth properties,” JOURNAL OF APPLIED PHYSICS, vol. 108, no. 4, 2010.
@article{1226873,
articleno = {{043505}},
author = {{Demeulemeester, J and Smeets, D and Comrie, CM and Van Bockstael, Charlotte and Knaepen, Werner and Detavernier, Christophe and Temst, K and Vantomme, A}},
issn = {{0021-8979}},
journal = {{JOURNAL OF APPLIED PHYSICS}},
keywords = {{RUTHERFORD BACKSCATTERING DATA,NI-SI SYSTEM,THIN-FILMS,REACTIVE DIFFUSION,PHASE-FORMATION,THERMAL-STABILITY,MECHANISMS,ALGORITHM,EXPANSION,ELEMENTS}},
language = {{eng}},
number = {{4}},
pages = {{11}},
title = {{The influence of Pt redistribution on Ni1-xPtxSi growth properties}},
url = {{http://doi.org/10.1063/1.3455873}},
volume = {{108}},
year = {{2010}},
}
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