The influence of Pt redistribution on Ni1-xPtxSi growth properties
(2010) JOURNAL OF APPLIED PHYSICS. 108(4).
Please use this url to cite or link to this publication:
http://hdl.handle.net/1854/LU-1226873
- author
- J Demeulemeester, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen UGent, Christophe Detavernier UGent, K Temst and A Vantomme
- organization
- year
- 2010
- type
- journalArticle (original)
- publication status
- published
- subject
- keyword
- RUTHERFORD BACKSCATTERING DATA, NI-SI SYSTEM, THIN-FILMS, REACTIVE DIFFUSION, PHASE-FORMATION, THERMAL-STABILITY, MECHANISMS, ALGORITHM, EXPANSION, ELEMENTS
- journal title
- JOURNAL OF APPLIED PHYSICS
- J. Appl. Phys.
- volume
- 108
- issue
- 4
- article number
- 043505
- pages
- 11 pages
- Web of Science type
- Article
- Web of Science id
- 000281857100036
- JCR category
- PHYSICS, APPLIED
- JCR impact factor
- 2.064 (2010)
- JCR rank
- 33/116 (2010)
- JCR quartile
- 2 (2010)
- ISSN
- 0021-8979
- DOI
- 10.1063/1.3455873
- language
- English
- UGent publication?
- yes
- classification
- A1
- copyright statement
- I have transferred the copyright for this publication to the publisher
- id
- 1226873
- handle
- http://hdl.handle.net/1854/LU-1226873
- date created
- 2011-05-18 17:47:38
- date last changed
- 2016-12-21 15:42:24
@article{1226873,
articleno = {043505},
author = {Demeulemeester, J and Smeets, D and Comrie, CM and Van Bockstael, Charlotte and Knaepen, Werner and Detavernier, Christophe and Temst, K and Vantomme, A},
issn = {0021-8979},
journal = {JOURNAL OF APPLIED PHYSICS},
keyword = {RUTHERFORD BACKSCATTERING DATA,NI-SI SYSTEM,THIN-FILMS,REACTIVE DIFFUSION,PHASE-FORMATION,THERMAL-STABILITY,MECHANISMS,ALGORITHM,EXPANSION,ELEMENTS},
language = {eng},
number = {4},
pages = {11},
title = {The influence of Pt redistribution on Ni1-xPtxSi growth properties},
url = {http://dx.doi.org/10.1063/1.3455873},
volume = {108},
year = {2010},
}
- Chicago
- Demeulemeester, J, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen, Christophe Detavernier, K Temst, and A Vantomme. 2010. “The Influence of Pt Redistribution on Ni1-xPtxSi Growth Properties.” Journal of Applied Physics 108 (4).
- APA
- Demeulemeester, J, Smeets, D., Comrie, C., Van Bockstael, C., Knaepen, W., Detavernier, C., Temst, K., et al. (2010). The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS, 108(4).
- Vancouver
- 1.Demeulemeester J, Smeets D, Comrie C, Van Bockstael C, Knaepen W, Detavernier C, et al. The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS. 2010;108(4).
- MLA
- Demeulemeester, J, D Smeets, CM Comrie, et al. “The Influence of Pt Redistribution on Ni1-xPtxSi Growth Properties.” JOURNAL OF APPLIED PHYSICS 108.4 (2010): n. pag. Print.