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The influence of Pt redistribution on Ni1-xPtxSi growth properties

J Demeulemeester, D Smeets, CM Comrie, Charlotte Van Bockstael UGent, Werner Knaepen UGent, Christophe Detavernier UGent, K Temst and A Vantomme (2010) JOURNAL OF APPLIED PHYSICS. 108(4).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
RUTHERFORD BACKSCATTERING DATA, NI-SI SYSTEM, THIN-FILMS, REACTIVE DIFFUSION, PHASE-FORMATION, THERMAL-STABILITY, MECHANISMS, ALGORITHM, EXPANSION, ELEMENTS
journal title
JOURNAL OF APPLIED PHYSICS
J. Appl. Phys.
volume
108
issue
4
article_number
043505
pages
11 pages
Web of Science type
Article
Web of Science id
000281857100036
JCR category
PHYSICS, APPLIED
JCR impact factor
2.064 (2010)
JCR rank
33/116 (2010)
JCR quartile
2 (2010)
ISSN
0021-8979
DOI
10.1063/1.3455873
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1226873
handle
http://hdl.handle.net/1854/LU-1226873
date created
2011-05-18 17:47:38
date last changed
2011-05-20 10:17:45
@article{1226873,
  articleno    = {043505},
  author       = {Demeulemeester, J and Smeets, D and Comrie, CM and Van Bockstael, Charlotte and Knaepen, Werner and Detavernier, Christophe and Temst, K and Vantomme, A},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {RUTHERFORD BACKSCATTERING DATA,NI-SI SYSTEM,THIN-FILMS,REACTIVE DIFFUSION,PHASE-FORMATION,THERMAL-STABILITY,MECHANISMS,ALGORITHM,EXPANSION,ELEMENTS},
  language     = {eng},
  number       = {4},
  pages        = {11},
  title        = {The influence of Pt redistribution on Ni1-xPtxSi growth properties},
  url          = {http://dx.doi.org/10.1063/1.3455873},
  volume       = {108},
  year         = {2010},
}

Chicago
Demeulemeester, J, D Smeets, CM Comrie, Charlotte Van Bockstael, Werner Knaepen, Christophe Detavernier, K Temst, and A Vantomme. 2010. “The Influence of Pt Redistribution on Ni1-xPtxSi Growth Properties.” Journal of Applied Physics 108 (4).
APA
Demeulemeester, J, Smeets, D., Comrie, C., Van Bockstael, C., Knaepen, W., Detavernier, C., Temst, K., et al. (2010). The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS, 108(4).
Vancouver
1.
Demeulemeester J, Smeets D, Comrie C, Van Bockstael C, Knaepen W, Detavernier C, et al. The influence of Pt redistribution on Ni1-xPtxSi growth properties. JOURNAL OF APPLIED PHYSICS. 2010;108(4).
MLA
Demeulemeester, J, D Smeets, CM Comrie, et al. “The Influence of Pt Redistribution on Ni1-xPtxSi Growth Properties.” JOURNAL OF APPLIED PHYSICS 108.4 (2010): n. pag. Print.