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Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

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ATOMIC-LAYER DEPOSITION, THERMAL-STABILITY, GATE DIELECTRICS, HFO2, GE, GE(100), FILMS

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Citation

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Chicago
Xie, Qi, Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yy-Long Jiang, Sven Van den Berghe, JunHu Liu, and Christophe Detavernier. 2010. “Ultrathin GeOxNy Interlayer Formed by in Situ NH3 Plasma Pretreatment for Passivation of Germanium Metal-oxide-semiconductor Devices.” Applied Physics Letters 97 (22).
APA
Xie, Qi, Musschoot, J., Schaekers, M., Caymax, M., Delabie, A., Qu, X.-P., Jiang, Y.-L., et al. (2010). Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS, 97(22).
Vancouver
1.
Xie Q, Musschoot J, Schaekers M, Caymax M, Delabie A, Qu X-P, et al. Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices. APPLIED PHYSICS LETTERS. 2010;97(22).
MLA
Xie, Qi, Jan Musschoot, Marc Schaekers, et al. “Ultrathin GeOxNy Interlayer Formed by in Situ NH3 Plasma Pretreatment for Passivation of Germanium Metal-oxide-semiconductor Devices.” APPLIED PHYSICS LETTERS 97.22 (2010): n. pag. Print.
@article{1226842,
  articleno    = {222902},
  author       = {Xie, Qi and Musschoot, Jan and Schaekers, Marc and Caymax, Matty and Delabie, Annelies and Qu, Xin-Ping and Jiang, Yy-Long and Van den Berghe, Sven and Liu, JunHu and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {22},
  pages        = {3},
  title        = {Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices},
  url          = {http://dx.doi.org/10.1063/1.3524208},
  volume       = {97},
  year         = {2010},
}

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