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Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

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Abstract
HfTiOx films deposited on TiN, Pt and Al2O3/Si bottom electrodes (BE) by Atomic Layer Deposition (AID) method were investigated in terms of the crystallization temperature, dielectric constant and leakage current. The as-deposited films show a linear increase of dielectric constant from 20 (HfO2) to 40 (TiO2) as a function of Ti content in the film. On the other hands, the dielectric constant of HfTiOx films with 64% - 30% Hf content increases up to 60 after crystallization annealing, which strongly correlates with the appearance of the orthorhombic HfTiO4 structure. Furthermore, the thermal treatment in O-2 ambient is found to have a drastic effect to decrease the leakage current density (J(g)). As a result, 10(-8) A/cm(2) at V-g=+1V with 0.8nm EOT is achieved with 30%-Hf contained film.
Keywords
DEPOSITION, CAPACITORS, LAYER

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Chicago
Tomida, K, M Popovici, Karl Opsomer, N Menou, WC Wang, A Delabie, J Swerts, et al. 2010. “Non-linear Dielectric Constant Increase with Ti Composition in High-k ALD-HfTiOx Films After O2 Crystallization Annealing.” In Iop Conference Series. Materials Science and Engineering, ed. P Muralt, M Kosec, V Raineri, and S Ravesi. Vol. 8. Bristol, UK: IOP Publishing.
APA
Tomida, K., Popovici, M., Opsomer, K., Menou, N., Wang, W., Delabie, A., Swerts, J., et al. (2010). Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing. In P. Muralt, M. Kosec, V. Raineri, & S. Ravesi (Eds.), IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING (Vol. 8). Presented at the Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Bristol, UK: IOP Publishing.
Vancouver
1.
Tomida K, Popovici M, Opsomer K, Menou N, Wang W, Delabie A, et al. Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing. In: Muralt P, Kosec M, Raineri V, Ravesi S, editors. IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING. Bristol, UK: IOP Publishing; 2010.
MLA
Tomida, K, M Popovici, Karl Opsomer, et al. “Non-linear Dielectric Constant Increase with Ti Composition in High-k ALD-HfTiOx Films After O2 Crystallization Annealing.” Iop Conference Series. Materials Science and Engineering. Ed. P Muralt et al. Vol. 8. Bristol, UK: IOP Publishing, 2010. Print.
@inproceedings{1226810,
  abstract     = {HfTiOx films deposited on TiN, Pt and Al2O3/Si bottom electrodes (BE) by Atomic Layer Deposition (AID) method were investigated in terms of the crystallization temperature, dielectric constant and leakage current. The as-deposited films show a linear increase of dielectric constant from 20 (HfO2) to 40 (TiO2) as a function of Ti content in the film. On the other hands, the dielectric constant of HfTiOx films with 64\% - 30\% Hf content increases up to 60 after crystallization annealing, which strongly correlates with the appearance of the orthorhombic HfTiO4 structure. Furthermore, the thermal treatment in O-2 ambient is found to have a drastic effect to decrease the leakage current density (J(g)). As a result, 10(-8) A/cm(2) at V-g=+1V with 0.8nm EOT is achieved with 30\%-Hf contained film.},
  articleno    = {012023},
  author       = {Tomida, K and Popovici, M and Opsomer, Karl and Menou, N and Wang, WC and Delabie, A and Swerts, J and Steenbergen, J and Kaczer, B and Elshocht, SV and Detavernier, Christophe and Afanas'ev, VV and Wouters, DJ and Kittl, JA},
  booktitle    = {IOP CONFERENCE SERIES. MATERIALS SCIENCE AND ENGINEERING},
  editor       = {Muralt, P and Kosec, M and Raineri, V and Ravesi, S},
  issn         = {1757-8981},
  keyword      = {DEPOSITION,CAPACITORS,LAYER},
  language     = {eng},
  location     = {Strasbourg, France},
  pages        = {4},
  publisher    = {IOP Publishing},
  title        = {Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing},
  url          = {http://dx.doi.org/10.1088/1757-899X/8/1/012023},
  volume       = {8},
  year         = {2010},
}

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