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TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi Xie UGent, Jan Musschoot UGent, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe and Christophe Detavernier UGent (2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G27-G30
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
ELECTRICAL-PROPERTIES, FILMS, INTERFACE, SUBSTRATE
journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Electrochem. Solid State Lett.
volume
14
issue
5
pages
G27 - G30
Web of Science type
Article
Web of Science id
000288128800018
JCR category
MATERIALS SCIENCE, MULTIDISCIPLINARY
JCR impact factor
1.995 (2011)
JCR rank
62/229 (2011)
JCR quartile
2 (2011)
ISSN
1099-0062
DOI
10.1149/1.3559770
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1226798
handle
http://hdl.handle.net/1854/LU-1226798
date created
2011-05-18 17:47:38
date last changed
2016-12-19 15:42:50
@article{1226798,
  author       = {Xie, Qi and Musschoot, Jan and Schaekers, Marc and Caymax, Matty and Delabie, Annelies and Lin, Dennis and Qu, Xin-Ping and Jiang, Yu-Long and Van den Berghe, Sven and Detavernier, Christophe},
  issn         = {1099-0062},
  journal      = {ELECTROCHEMICAL AND SOLID STATE LETTERS},
  keyword      = {ELECTRICAL-PROPERTIES,FILMS,INTERFACE,SUBSTRATE},
  language     = {eng},
  number       = {5},
  pages        = {G27--G30},
  title        = {TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer},
  url          = {http://dx.doi.org/10.1149/1.3559770},
  volume       = {14},
  year         = {2011},
}

Chicago
Xie, Qi, Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe, and Christophe Detavernier. 2011. “TiO2/HfO2 Bi-layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-based Metal-oxide-semiconductor Devices Using GeOxNy Passivation Layer.” Electrochemical and Solid State Letters 14 (5): G27–G30.
APA
Xie, Qi, Musschoot, J., Schaekers, M., Caymax, M., Delabie, A., Lin, D., Qu, X.-P., et al. (2011). TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer. ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(5), G27–G30.
Vancouver
1.
Xie Q, Musschoot J, Schaekers M, Caymax M, Delabie A, Lin D, et al. TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer. ELECTROCHEMICAL AND SOLID STATE LETTERS. 2011;14(5):G27–G30.
MLA
Xie, Qi, Jan Musschoot, Marc Schaekers, et al. “TiO2/HfO2 Bi-layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-based Metal-oxide-semiconductor Devices Using GeOxNy Passivation Layer.” ELECTROCHEMICAL AND SOLID STATE LETTERS 14.5 (2011): G27–G30. Print.