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Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

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DEPOSITION, CAPACITORS, FILMS, GE

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MLA
Xie, Qi et al. “Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma.” ELECTROCHEMICAL AND SOLID STATE LETTERS 14.5 (2011): G20–G22. Print.
APA
Xie, Qi, Deduytsche, D., Schaekers, M., Caymax, M., Delabie, A., Qu, X.-P., & Detavernier, C. (2011). Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma. ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(5), G20–G22.
Chicago author-date
Xie, Qi, Davy Deduytsche, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, and Christophe Detavernier. 2011. “Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma.” Electrochemical and Solid State Letters 14 (5): G20–G22.
Chicago author-date (all authors)
Xie, Qi, Davy Deduytsche, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, and Christophe Detavernier. 2011. “Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma.” Electrochemical and Solid State Letters 14 (5): G20–G22.
Vancouver
1.
Xie Q, Deduytsche D, Schaekers M, Caymax M, Delabie A, Qu X-P, et al. Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma. ELECTROCHEMICAL AND SOLID STATE LETTERS. 2011;14(5):G20–G22.
IEEE
[1]
Q. Xie et al., “Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma,” ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 14, no. 5, pp. G20–G22, 2011.
@article{1226789,
  author       = {{Xie, Qi and Deduytsche, Davy and Schaekers, Marc and Caymax, Matty and Delabie, Annelies and Qu, Xin-Ping and Detavernier, Christophe}},
  issn         = {{1099-0062}},
  journal      = {{ELECTROCHEMICAL AND SOLID STATE LETTERS}},
  keywords     = {{DEPOSITION,CAPACITORS,FILMS,GE}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{G20--G22}},
  title        = {{Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma}},
  url          = {{http://dx.doi.org/10.1149/1.3551461}},
  volume       = {{14}},
  year         = {{2011}},
}

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