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Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

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DEPOSITION, CAPACITORS, FILMS, GE

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Chicago
Xie, Qi, Davy Deduytsche, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, and Christophe Detavernier. 2011. “Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma.” Electrochemical and Solid State Letters 14 (5): G20–G22.
APA
Xie, Qi, Deduytsche, D., Schaekers, M., Caymax, M., Delabie, A., Qu, X.-P., & Detavernier, C. (2011). Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma. ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(5), G20–G22.
Vancouver
1.
Xie Q, Deduytsche D, Schaekers M, Caymax M, Delabie A, Qu X-P, et al. Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma. ELECTROCHEMICAL AND SOLID STATE LETTERS. 2011;14(5):G20–G22.
MLA
Xie, Qi, Davy Deduytsche, Marc Schaekers, et al. “Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma.” ELECTROCHEMICAL AND SOLID STATE LETTERS 14.5 (2011): G20–G22. Print.
@article{1226789,
  author       = {Xie, Qi and Deduytsche, Davy and Schaekers, Marc and Caymax, Matty and Delabie, Annelies and Qu, Xin-Ping and Detavernier, Christophe},
  issn         = {1099-0062},
  journal      = {ELECTROCHEMICAL AND SOLID STATE LETTERS},
  keyword      = {DEPOSITION,CAPACITORS,FILMS,GE},
  language     = {eng},
  number       = {5},
  pages        = {G20--G22},
  title        = {Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma},
  url          = {http://dx.doi.org/10.1149/1.3551461},
  volume       = {14},
  year         = {2011},
}

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