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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.684-689
Author
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Keywords
METALLIZATION, TIN, SURFACES, Seed layer, Copper, Ruthenium, Electrochemical deposition (ECD), Interconnect, Reduction, Copper oxide, Atomic layer deposition (ALD)

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Citation

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MLA
Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, et al. “ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems.” MICROELECTRONIC ENGINEERING 88.5 (2011): 684–689. Print.
APA
Waechtler, T., Ding, S.-F., Hofmann, L., Mothes, R., Xie, Q., Oswald, S., Detavernier, C., et al. (2011). ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. MICROELECTRONIC ENGINEERING, 88(5), 684–689. Presented at the International workshop on Materials for Advanced Metallization (MAM 2010).
Chicago author-date
Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, Robert Mothes, Qi Xie, Steffen Oswald, Christophe Detavernier, et al. 2011. “ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems.” Microelectronic Engineering 88 (5): 684–689.
Chicago author-date (all authors)
Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, Robert Mothes, Qi Xie, Steffen Oswald, Christophe Detavernier, Stefan E Schulz, Xin-Ping Qu, Heinrich Lang, and Thomas Gessner. 2011. “ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems.” Microelectronic Engineering 88 (5): 684–689.
Vancouver
1.
Waechtler T, Ding S-F, Hofmann L, Mothes R, Xie Q, Oswald S, et al. ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. MICROELECTRONIC ENGINEERING. 2011;88(5):684–9.
IEEE
[1]
T. Waechtler et al., “ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems,” MICROELECTRONIC ENGINEERING, vol. 88, no. 5, pp. 684–689, 2011.
@article{1226769,
  author       = {Waechtler, Thomas and Ding, Shao-Feng and Hofmann, Lutz and Mothes, Robert and Xie, Qi and Oswald, Steffen and Detavernier, Christophe and Schulz, Stefan E and Qu, Xin-Ping and Lang, Heinrich and Gessner, Thomas},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keywords     = {METALLIZATION,TIN,SURFACES,Seed layer,Copper,Ruthenium,Electrochemical deposition (ECD),Interconnect,Reduction,Copper oxide,Atomic layer deposition (ALD)},
  language     = {eng},
  location     = {Mechelen, Belgium},
  number       = {5},
  pages        = {684--689},
  title        = {ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.07.004},
  volume       = {88},
  year         = {2011},
}

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