Advanced search
1 file | 888.45 KB

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.684-689
Author
Organization
Keywords
METALLIZATION, TIN, SURFACES, Seed layer, Copper, Ruthenium, Electrochemical deposition (ECD), Interconnect, Reduction, Copper oxide, Atomic layer deposition (ALD)

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 888.45 KB

Citation

Please use this url to cite or link to this publication:

Chicago
Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, Robert Mothes, Qi Xie, Steffen Oswald, Christophe Detavernier, et al. 2011. “ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems.” Microelectronic Engineering 88 (5): 684–689.
APA
Waechtler, T., Ding, S.-F., Hofmann, L., Mothes, R., Xie, Q., Oswald, S., Detavernier, C., et al. (2011). ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. MICROELECTRONIC ENGINEERING, 88(5), 684–689. Presented at the International workshop on Materials for Advanced Metallization (MAM 2010).
Vancouver
1.
Waechtler T, Ding S-F, Hofmann L, Mothes R, Xie Q, Oswald S, et al. ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. MICROELECTRONIC ENGINEERING. 2011;88(5):684–9.
MLA
Waechtler, Thomas, Shao-Feng Ding, Lutz Hofmann, et al. “ALD-grown Seed Layers for Electrochemical Copper Deposition Integrated with Different Diffusion Barrier Systems.” MICROELECTRONIC ENGINEERING 88.5 (2011): 684–689. Print.
@article{1226769,
  author       = {Waechtler, Thomas and Ding, Shao-Feng and Hofmann, Lutz and Mothes, Robert and Xie, Qi and Oswald, Steffen and Detavernier, Christophe and Schulz, Stefan E and Qu, Xin-Ping and Lang, Heinrich and Gessner, Thomas},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keyword      = {METALLIZATION,TIN,SURFACES,Seed layer,Copper,Ruthenium,Electrochemical deposition (ECD),Interconnect,Reduction,Copper oxide,Atomic layer deposition (ALD)},
  language     = {eng},
  location     = {Mechelen, Belgium},
  number       = {5},
  pages        = {684--689},
  title        = {ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.07.004},
  volume       = {88},
  year         = {2011},
}

Altmetric
View in Altmetric
Web of Science
Times cited: