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TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.646-650
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Keywords
TaCN, Atomic layer deposition, Reaction pathway, Diffusion activation energy, TAN, THIN-FILMS

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Citation

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MLA
Xie, Qi, Davy Deduytsche, Jan Musschoot, et al. “TaCN Growth with PDMAT and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition.” MICROELECTRONIC ENGINEERING 88.5 (2011): 646–650. Print.
APA
Xie, Qi, Deduytsche, D., Musschoot, J., Vanmeirhaeghe, R., Detavernier, C., Ding, S.-F., & Qu, X.-P. (2011). TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition. MICROELECTRONIC ENGINEERING, 88(5), 646–650. Presented at the International workshop on Materials for Advanced Metallization (MAM 2010).
Chicago author-date
Xie, Qi, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, Christophe Detavernier, Shao-Feng Ding, and Xin-Ping Qu. 2011. “TaCN Growth with PDMAT and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition.” Microelectronic Engineering 88 (5): 646–650.
Chicago author-date (all authors)
Xie, Qi, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, Christophe Detavernier, Shao-Feng Ding, and Xin-Ping Qu. 2011. “TaCN Growth with PDMAT and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition.” Microelectronic Engineering 88 (5): 646–650.
Vancouver
1.
Xie Q, Deduytsche D, Musschoot J, Vanmeirhaeghe R, Detavernier C, Ding S-F, et al. TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition. MICROELECTRONIC ENGINEERING. 2011;88(5):646–50.
IEEE
[1]
Q. Xie et al., “TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition,” MICROELECTRONIC ENGINEERING, vol. 88, no. 5, pp. 646–650, 2011.
@article{1226760,
  author       = {Xie, Qi and Deduytsche, Davy and Musschoot, Jan and Vanmeirhaeghe, Roland and Detavernier, Christophe and Ding, Shao-Feng and Qu, Xin-Ping},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keywords     = {TaCN,Atomic layer deposition,Reaction pathway,Diffusion activation energy,TAN,THIN-FILMS},
  language     = {eng},
  location     = {Mechelen, Belgium},
  number       = {5},
  pages        = {646--650},
  title        = {TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.06.037},
  volume       = {88},
  year         = {2011},
}

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