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TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.646-650
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Keywords
TaCN, Atomic layer deposition, Reaction pathway, Diffusion activation energy, TAN, THIN-FILMS

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Citation

Please use this url to cite or link to this publication:

Chicago
Xie, Qi, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, Christophe Detavernier, Shao-Feng Ding, and Xin-Ping Qu. 2011. “TaCN Growth with PDMAT and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition.” Microelectronic Engineering 88 (5): 646–650.
APA
Xie, Qi, Deduytsche, D., Musschoot, J., Vanmeirhaeghe, R., Detavernier, C., Ding, S.-F., & Qu, X.-P. (2011). TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition. MICROELECTRONIC ENGINEERING, 88(5), 646–650. Presented at the International workshop on Materials for Advanced Metallization (MAM 2010).
Vancouver
1.
Xie Q, Deduytsche D, Musschoot J, Vanmeirhaeghe R, Detavernier C, Ding S-F, et al. TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition. MICROELECTRONIC ENGINEERING. 2011;88(5):646–50.
MLA
Xie, Qi, Davy Deduytsche, Jan Musschoot, et al. “TaCN Growth with PDMAT and H-2/Ar Plasma by Plasma Enhanced Atomic Layer Deposition.” MICROELECTRONIC ENGINEERING 88.5 (2011): 646–650. Print.
@article{1226760,
  author       = {Xie, Qi and Deduytsche, Davy and Musschoot, Jan and Vanmeirhaeghe, Roland and Detavernier, Christophe and Ding, Shao-Feng and Qu, Xin-Ping},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keyword      = {TaCN,Atomic layer deposition,Reaction pathway,Diffusion activation energy,TAN,THIN-FILMS},
  language     = {eng},
  location     = {Mechelen, Belgium},
  number       = {5},
  pages        = {646--650},
  title        = {TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.06.037},
  volume       = {88},
  year         = {2011},
}

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