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Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

Xiao-Rong Wang, Yu-Long Jiang, Qi Xie UGent, Christophe Detavernier UGent, Guo-Ping Ru, Xin-Ping Qu and Bing-Zong Li (2011) MICROELECTRONIC ENGINEERING. 88(5). p.573-577
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
Effective work function (EWF), Flat band voltage (V-FB), Metal gate, Aluminum (Al), Titanium nitride (TiN), DEVICES, ELECTRODES, TIN
journal title
MICROELECTRONIC ENGINEERING
Microelectron. Eng.
volume
88
issue
5
pages
573 - 577
conference name
International workshop on Materials for Advanced Metallization (MAM 2010)
conference location
Mechelen, Belgium
conference start
2010-03-07
conference end
2010-03-10
Web of Science type
Proceedings Paper
Web of Science id
000289137600011
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
1.557 (2011)
JCR rank
72/244 (2011)
JCR quartile
2 (2011)
ISSN
0167-9317
DOI
10.1016/j.mee.2010.06.029
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1226751
handle
http://hdl.handle.net/1854/LU-1226751
date created
2011-05-18 17:47:38
date last changed
2016-12-19 15:44:49
@article{1226751,
  author       = {Wang, Xiao-Rong and Jiang, Yu-Long and Xie, Qi and Detavernier, Christophe and Ru, Guo-Ping and Qu, Xin-Ping and Li, Bing-Zong},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keyword      = {Effective work function (EWF),Flat band voltage (V-FB),Metal gate,Aluminum (Al),Titanium nitride (TiN),DEVICES,ELECTRODES,TIN},
  language     = {eng},
  location     = {Mechelen, Belgium},
  number       = {5},
  pages        = {573--577},
  title        = {Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure},
  url          = {http://dx.doi.org/10.1016/j.mee.2010.06.029},
  volume       = {88},
  year         = {2011},
}

Chicago
Wang, Xiao-Rong, Yu-Long Jiang, Qi Xie, Christophe Detavernier, Guo-Ping Ru, Xin-Ping Qu, and Bing-Zong Li. 2011. “Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure.” Microelectronic Engineering 88 (5): 573–577.
APA
Wang, X.-R., Jiang, Y.-L., Xie, Q., Detavernier, C., Ru, G.-P., Qu, X.-P., & Li, B.-Z. (2011). Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure. MICROELECTRONIC ENGINEERING, 88(5), 573–577. Presented at the International workshop on Materials for Advanced Metallization (MAM 2010).
Vancouver
1.
Wang X-R, Jiang Y-L, Xie Q, Detavernier C, Ru G-P, Qu X-P, et al. Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure. MICROELECTRONIC ENGINEERING. 2011;88(5):573–7.
MLA
Wang, Xiao-Rong, Yu-Long Jiang, Qi Xie, et al. “Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure.” MICROELECTRONIC ENGINEERING 88.5 (2011): 573–577. Print.