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Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

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VANADIUM DIOXIDE, CRYSTALLIZATION, INSULATOR-TRANSITION, PHASE, CHEMICAL-VAPOR-DEPOSITION, ACETYLACETONATE, TEMPERATURE

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Citation

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Chicago
Rampelberg, Geert, Marc Schaekers, Koen Martens, Qi Xie, Davy Deduytsche, Bob De Schutter, Nicolas Blasco, Jorge Kittl, and Christophe Detavernier. 2011. “Semiconductor-metal Transition in Thin VO2 Films Grown by Ozone Based Atomic Layer Deposition.” Applied Physics Letters 98 (16).
APA
Rampelberg, G., Schaekers, M., Martens, K., Xie, Q., Deduytsche, D., De Schutter, B., Blasco, N., et al. (2011). Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition. APPLIED PHYSICS LETTERS, 98(16).
Vancouver
1.
Rampelberg G, Schaekers M, Martens K, Xie Q, Deduytsche D, De Schutter B, et al. Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition. APPLIED PHYSICS LETTERS. 2011;98(16).
MLA
Rampelberg, Geert, Marc Schaekers, Koen Martens, et al. “Semiconductor-metal Transition in Thin VO2 Films Grown by Ozone Based Atomic Layer Deposition.” APPLIED PHYSICS LETTERS 98.16 (2011): n. pag. Print.
@article{1226717,
  articleno    = {162902},
  author       = {Rampelberg, Geert and Schaekers, Marc and Martens, Koen and Xie, Qi and Deduytsche, Davy and De Schutter, Bob and Blasco, Nicolas and Kittl, Jorge and Detavernier, Christophe},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {VANADIUM DIOXIDE,CRYSTALLIZATION,INSULATOR-TRANSITION,PHASE,CHEMICAL-VAPOR-DEPOSITION,ACETYLACETONATE,TEMPERATURE},
  language     = {eng},
  number       = {16},
  pages        = {3},
  title        = {Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition},
  url          = {http://dx.doi.org/10.1063/1.3579195},
  volume       = {98},
  year         = {2011},
}

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