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A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.

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Chicago
Vanalme, Greet, Lieve Goubert, Roland Vanmeirhaeghe, Felix Cardon, and Peter Van Daele. 1999. “A Ballistic Electron Emission Microscopy Study of Barrier Height Inhomogeneities Introduced in Au/III-V Semiconductor Schottky Barrier Contacts by Chemical Pretreatments.” Semiconductor Science and Technology 14 (9): 871–877.
APA
Vanalme, G., Goubert, L., Vanmeirhaeghe, R., Cardon, F., & Van Daele, P. (1999). A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 14(9), 871–877.
Vancouver
1.
Vanalme G, Goubert L, Vanmeirhaeghe R, Cardon F, Van Daele P. A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 1999;14(9):871–7.
MLA
Vanalme, Greet, Lieve Goubert, Roland Vanmeirhaeghe, et al. “A Ballistic Electron Emission Microscopy Study of Barrier Height Inhomogeneities Introduced in Au/III-V Semiconductor Schottky Barrier Contacts by Chemical Pretreatments.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 14.9 (1999): 871–877. Print.
@article{117272,
  author       = {Vanalme, Greet and Goubert, Lieve and Vanmeirhaeghe, Roland and Cardon, Felix and Van Daele, Peter},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {9},
  pages        = {871--877},
  title        = {A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.},
  volume       = {14},
  year         = {1999},
}

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