Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer.
- Author
- C TRAGER-COWAN, I OSBORNE, M BARISONZI, SK MANSON-SMITH, KP O'DONNELL, Koen Jacobs, Ingrid Moerman (UGent) and Piet Demeester (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-117212
- Chicago
- TRAGER-COWAN, C, I OSBORNE, M BARISONZI, SK MANSON-SMITH, KP O’DONNELL, Koen Jacobs, Ingrid Moerman, and Piet Demeester. 1999. “Cathodoluminescence from an InGaN/GaN MQW Grown on an Epitaxially Laterally Overgrown GaN Epilayer.” Physica Status Solidi B-basic Research 216 (1): 347–350.
- APA
- TRAGER-COWAN, C., OSBORNE, I., BARISONZI, M., MANSON-SMITH, S., O’DONNELL, K., Jacobs, K., Moerman, I., et al. (1999). Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 216(1), 347–350.
- Vancouver
- 1.TRAGER-COWAN C, OSBORNE I, BARISONZI M, MANSON-SMITH S, O’DONNELL K, Jacobs K, et al. Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 1999;216(1):347–50.
- MLA
- TRAGER-COWAN, C, I OSBORNE, M BARISONZI, et al. “Cathodoluminescence from an InGaN/GaN MQW Grown on an Epitaxially Laterally Overgrown GaN Epilayer.” PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216.1 (1999): 347–350. Print.
@article{117212,
author = {TRAGER-COWAN, C and OSBORNE, I and BARISONZI, M and MANSON-SMITH, SK and O'DONNELL, KP and Jacobs, Koen and Moerman, Ingrid and Demeester, Piet},
issn = {0370-1972},
journal = {PHYSICA STATUS SOLIDI B-BASIC RESEARCH},
language = {eng},
number = {1},
pages = {347--350},
title = {Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer.},
volume = {216},
year = {1999},
}