Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer
- Author
- C TRAGER-COWAN, A MOHAMMED, SK MANSON-SMITH, KP O'DONNELL, Koen Jacobs and Ingrid Moerman (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-117205
- Chicago
- TRAGER-COWAN, C, A MOHAMMED, SK MANSON-SMITH, KP O’DONNELL, Koen Jacobs, and Ingrid Moerman. “Cathodoluminescence from InGaN/GaN MQW Grown on an Epitaxially Lateral Overgrown GaN Epilayer.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 87.
- APA
- TRAGER-COWAN, C., MOHAMMED, A., MANSON-SMITH, S., O’DONNELL, K., Jacobs, K., & Moerman, I. (n.d.). Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (p. 87).
- Vancouver
- 1.TRAGER-COWAN C, MOHAMMED A, MANSON-SMITH S, O’DONNELL K, Jacobs K, Moerman I. Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p. 87.
- MLA
- TRAGER-COWAN, C, A MOHAMMED, SK MANSON-SMITH, et al. “Cathodoluminescence from InGaN/GaN MQW Grown on an Epitaxially Lateral Overgrown GaN Epilayer.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 87. Print.
@inproceedings{117205,
author = {TRAGER-COWAN, C and MOHAMMED, A and MANSON-SMITH, SK and O'DONNELL, KP and Jacobs, Koen and Moerman, Ingrid},
booktitle = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
language = {eng},
pages = {87},
title = {Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer},
}