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Intrinsic infrared luminescence from InGaN layers.

KP O'DONNELL, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van Der Stricht and Koen Jacobs (1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p.44-45
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author
organization
year
type
conference
publication status
published
subject
in
Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France
pages
44-45 pages
language
English
UGent publication?
yes
classification
C1
id
117116
handle
http://hdl.handle.net/1854/LU-117116
date created
2004-01-14 13:35:00
date last changed
2016-12-19 15:34:57
@inproceedings{117116,
  author       = {O'DONNELL, KP and MARTIN, RW and PEREIRA, S and BANGURA, A and WHITE, ME and Van Der Stricht, Wim and Jacobs, Koen},
  booktitle    = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
  language     = {eng},
  pages        = {44--45},
  title        = {Intrinsic infrared luminescence from InGaN layers.},
  year         = {1999},
}

Chicago
O’DONNELL, KP, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van Der Stricht, and Koen Jacobs. 1999. “Intrinsic Infrared Luminescence from InGaN Layers.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 44–45.
APA
O’DONNELL, K., MARTIN, R., PEREIRA, S., BANGURA, A., WHITE, M., Van Der Stricht, W., & Jacobs, K. (1999). Intrinsic infrared luminescence from InGaN layers. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (pp. 44–45).
Vancouver
1.
O’DONNELL K, MARTIN R, PEREIRA S, BANGURA A, WHITE M, Van Der Stricht W, et al. Intrinsic infrared luminescence from InGaN layers. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. p. 44–5.
MLA
O’DONNELL, KP, RW MARTIN, S PEREIRA, et al. “Intrinsic Infrared Luminescence from InGaN Layers.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. 44–45. Print.