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Exciton localization and the Stokes' shift in InGaN epilayers.

(1999) APPLIED PHYSICS LETTERS. 74(2). p.263-265
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Chicago
MARTIN, RW, PG MIDDLETON, KP O’DONNELL, and Wim Van Der Stricht. 1999. “Exciton Localization and the Stokes’ Shift in InGaN Epilayers.” Applied Physics Letters 74 (2): 263–265.
APA
MARTIN, R., MIDDLETON, P., O’DONNELL, K., & Van Der Stricht, W. (1999). Exciton localization and the Stokes’ shift in InGaN epilayers. APPLIED PHYSICS LETTERS, 74(2), 263–265.
Vancouver
1.
MARTIN R, MIDDLETON P, O’DONNELL K, Van Der Stricht W. Exciton localization and the Stokes’ shift in InGaN epilayers. APPLIED PHYSICS LETTERS. 1999;74(2):263–5.
MLA
MARTIN, RW, PG MIDDLETON, KP O’DONNELL, et al. “Exciton Localization and the Stokes’ Shift in InGaN Epilayers.” APPLIED PHYSICS LETTERS 74.2 (1999): 263–265. Print.
@article{117085,
  author       = {MARTIN, RW and MIDDLETON, PG and O'DONNELL, KP and Van Der Stricht, Wim},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {2},
  pages        = {263--265},
  title        = {Exciton localization and the Stokes' shift in InGaN epilayers.},
  volume       = {74},
  year         = {1999},
}

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