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Chemical role of SF6 in a SiCl4-based reactive ion etching of GaNSemiconductor and Integrated Optoelectronics (SIOE '99), 7-9 April 1999, Cardiff, United Kingdom,.

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Chicago
KAROUTA, F, B JACOBS, MCJ KRAMER, Koen Jacobs, and Ingrid Moerman. “Chemical Role of SF6 in a SiCl4-based Reactive Ion Etching of GaNSemiconductor and Integrated Optoelectronics (SIOE  ’99), 7-9 April 1999, Cardiff, United Kingdom,.”
APA
KAROUTA, F., JACOBS, B., KRAMER, M., Jacobs, K., & Moerman, I. (n.d.). Chemical role of SF6 in a SiCl4-based reactive ion etching of GaNSemiconductor and Integrated Optoelectronics (SIOE  ’99), 7-9 April 1999, Cardiff, United Kingdom,.
Vancouver
1.
KAROUTA F, JACOBS B, KRAMER M, Jacobs K, Moerman I. Chemical role of SF6 in a SiCl4-based reactive ion etching of GaNSemiconductor and Integrated Optoelectronics (SIOE  ’99), 7-9 April 1999, Cardiff, United Kingdom,.
MLA
KAROUTA, F, B JACOBS, MCJ KRAMER, et al. “Chemical Role of SF6 in a SiCl4-based Reactive Ion Etching of GaNSemiconductor and Integrated Optoelectronics (SIOE  ’99), 7-9 April 1999, Cardiff, United Kingdom,.” n. pag. Print.
@misc{117037,
  author       = {KAROUTA, F and JACOBS, B and KRAMER, MCJ and Jacobs, Koen and Moerman, Ingrid},
  language     = {eng},
  title        = {Chemical role of SF6 in a SiCl4-based reactive ion etching of GaNSemiconductor and Integrated Optoelectronics (SIOE '99), 7-9 April 1999, Cardiff, United Kingdom,.},
}