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Side-wall morphology in reactive ion etching of GaN.

F KAROUTA, B JACOBS, Koen Jacobs and Ingrid Moerman (UGent)
(1999) Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium. p.215-217
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MLA
KAROUTA, F, B JACOBS, Koen Jacobs, et al. “Side-wall Morphology in Reactive Ion Etching of GaN.” Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium. 1999. 215–217. Print.
APA
KAROUTA, F., JACOBS, B., Jacobs, K., & Moerman, I. (1999). Side-wall morphology in reactive ion etching of GaN. Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium (pp. 215–217).
Chicago author-date
KAROUTA, F, B JACOBS, Koen Jacobs, and Ingrid Moerman. 1999. “Side-wall Morphology in Reactive Ion Etching of GaN.” In Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium, 215–217.
Chicago author-date (all authors)
KAROUTA, F, B JACOBS, Koen Jacobs, and Ingrid Moerman. 1999. “Side-wall Morphology in Reactive Ion Etching of GaN.” In Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium, 215–217.
Vancouver
1.
KAROUTA F, JACOBS B, Jacobs K, Moerman I. Side-wall morphology in reactive ion etching of GaN. Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium. 1999. p. 215–7.
IEEE
[1]
F. KAROUTA, B. JACOBS, K. Jacobs, and I. Moerman, “Side-wall morphology in reactive ion etching of GaN.,” in Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium, 1999, pp. 215–217.
@inproceedings{117033,
  author       = {KAROUTA, F and JACOBS, B and Jacobs, Koen and Moerman, Ingrid},
  booktitle    = {Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium},
  language     = {eng},
  pages        = {215--217},
  title        = {Side-wall morphology in reactive ion etching of GaN.},
  year         = {1999},
}