Side-wall morphology in reactive ion etching of GaN.
- Author
- F KAROUTA, B JACOBS, Koen Jacobs and Ingrid Moerman (UGent)
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-117033
- Chicago
- KAROUTA, F, B JACOBS, Koen Jacobs, and Ingrid Moerman. 1999. “Side-wall Morphology in Reactive Ion Etching of GaN.” In Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium, 215–217.
- APA
- KAROUTA, F., JACOBS, B., Jacobs, K., & Moerman, I. (1999). Side-wall morphology in reactive ion etching of GaN. Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium (pp. 215–217).
- Vancouver
- 1.KAROUTA F, JACOBS B, Jacobs K, Moerman I. Side-wall morphology in reactive ion etching of GaN. Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium. 1999. p. 215–7.
- MLA
- KAROUTA, F, B JACOBS, Koen Jacobs, et al. “Side-wall Morphology in Reactive Ion Etching of GaN.” Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium. 1999. 215–217. Print.
@inproceedings{117033,
author = {KAROUTA, F and JACOBS, B and Jacobs, Koen and Moerman, Ingrid},
booktitle = {Proceedings of the 4th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 15, 1999, Mons, Belgium},
language = {eng},
pages = {215--217},
title = {Side-wall morphology in reactive ion etching of GaN.},
year = {1999},
}