Ghent University Academic Bibliography

Advanced

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy.

B HAMILTON, K FERHAH, J DAVIDSON, P DAWSON, E WHITTAKER, TS CHENG, CT FOXON and Zahia Bougrioua (1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p.131-132
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France
pages
131-132 pages
language
English
UGent publication?
yes
classification
C1
id
116977
handle
http://hdl.handle.net/1854/LU-116977
date created
2004-01-14 13:35:00
date last changed
2016-12-19 15:36:03
@inproceedings{116977,
  author       = {HAMILTON, B and FERHAH, K and DAVIDSON, J and DAWSON, P and WHITTAKER, E and CHENG, TS and FOXON, CT and Bougrioua, Zahia},
  booktitle    = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
  language     = {eng},
  pages        = {131--132},
  title        = {Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy.},
  year         = {1999},
}

Chicago
HAMILTON, B, K FERHAH, J DAVIDSON, P DAWSON, E WHITTAKER, TS CHENG, CT FOXON, and Zahia Bougrioua. 1999. “Detection of Localised Variation in the Electronic Properties of GaN Grown by MOCVD and MBE Using Scanning Tunneling Microscopy.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 131–132.
APA
HAMILTON, B., FERHAH, K., DAVIDSON, J., DAWSON, P., WHITTAKER, E., CHENG, T., FOXON, C., et al. (1999). Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (pp. 131–132).
Vancouver
1.
HAMILTON B, FERHAH K, DAVIDSON J, DAWSON P, WHITTAKER E, CHENG T, et al. Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. p. 131–2.
MLA
HAMILTON, B, K FERHAH, J DAVIDSON, et al. “Detection of Localised Variation in the Electronic Properties of GaN Grown by MOCVD and MBE Using Scanning Tunneling Microscopy.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. 131–132. Print.