Ghent University Academic Bibliography

@inproceedings{116977,
  author       = {HAMILTON, B and FERHAH, K and DAVIDSON, J and DAWSON, P and WHITTAKER, E and CHENG, TS and FOXON, CT and Bougrioua, Zahia},
  booktitle    = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
  language     = {eng},
  pages        = {131--132},
  title        = {Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy.},
  year         = {1999},
}

Chicago

HAMILTON, B, K FERHAH, J DAVIDSON, P DAWSON, E WHITTAKER, TS CHENG, CT FOXON, and Zahia Bougrioua. 1999. “Detection of Localised Variation in the Electronic Properties of GaN Grown by MOCVD and MBE Using Scanning Tunneling Microscopy.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 131–132.

APA

HAMILTON, B., FERHAH, K., DAVIDSON, J., DAWSON, P., WHITTAKER, E., CHENG, T., FOXON, C., et al. (1999). Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (pp. 131–132).

Vancouver

1.

HAMILTON B, FERHAH K, DAVIDSON J, DAWSON P, WHITTAKER E, CHENG T, et al. Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. p. 131–2.

MLA

HAMILTON, B, K FERHAH, J DAVIDSON, et al. “Detection of Localised Variation in the Electronic Properties of GaN Grown by MOCVD and MBE Using Scanning Tunneling Microscopy.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. 131–132. Print.