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Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.

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Chicago
DUXBURY, N, P DAWSON, U BANGERT, EJ THRUSH, Wim Van Der Stricht, Koen Jacobs, and Ingrid Moerman. 1999. “Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD.” Physica Status Solidi B-basic Research 216 (1): 355–359.
APA
DUXBURY, N., DAWSON, P., BANGERT, U., THRUSH, E., Van Der Stricht, W., Jacobs, K., & Moerman, I. (1999). Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 216(1), 355–359.
Vancouver
1.
DUXBURY N, DAWSON P, BANGERT U, THRUSH E, Van Der Stricht W, Jacobs K, et al. Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 1999;216(1):355–9.
MLA
DUXBURY, N, P DAWSON, U BANGERT, et al. “Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD.” PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216.1 (1999): 355–359. Print.
@article{116963,
  author       = {DUXBURY, N and DAWSON, P and BANGERT, U and THRUSH, EJ and Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid},
  issn         = {0370-1972},
  journal      = {PHYSICA STATUS SOLIDI B-BASIC RESEARCH},
  language     = {eng},
  number       = {1},
  pages        = {355--359},
  title        = {Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.},
  volume       = {216},
  year         = {1999},
}

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