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Chicago
DUXBURY, N, P DAWSON, U BANGERT, EJ THRUSH, Wim Van Der Stricht, Koen Jacobs, and Ingrid Moerman. “Effects of Carrier Gas Type on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 130.
APA
DUXBURY, N., DAWSON, P., BANGERT, U., THRUSH, E., Van Der Stricht, W., Jacobs, K., & Moerman, I. (n.d.). Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (p. 130).
Vancouver
1.
DUXBURY N, DAWSON P, BANGERT U, THRUSH E, Van Der Stricht W, Jacobs K, et al. Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p. 130.
MLA
DUXBURY, N, P DAWSON, U BANGERT, et al. “Effects of Carrier Gas Type on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 130. Print.
@inproceedings{116956,
  author       = {DUXBURY, N and DAWSON, P and BANGERT, U and THRUSH, EJ and Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid},
  booktitle    = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
  language     = {eng},
  pages        = {130},
  title        = {Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD},
}