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Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.

Zahia Bougrioua, Ingrid Moerman UGent, Piet Demeester UGent, EJ THRUSH, JL GUYAUX and JC GARCIA (1999) Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. p.61-63
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author
organization
year
type
conference
publication status
published
subject
in
Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic
pages
61-63 pages
language
English
UGent publication?
yes
classification
C1
id
116851
handle
http://hdl.handle.net/1854/LU-116851
date created
2004-01-14 13:35:00
date last changed
2016-12-19 15:35:19
@inproceedings{116851,
  author       = {Bougrioua, Zahia and Moerman, Ingrid and Demeester, Piet and THRUSH, EJ and GUYAUX, JL and GARCIA, JC},
  booktitle    = {Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic},
  language     = {eng},
  pages        = {61--63},
  title        = {Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.},
  year         = {1999},
}

Chicago
Bougrioua, Zahia, Ingrid Moerman, Piet Demeester, EJ THRUSH, JL GUYAUX, and JC GARCIA. 1999. “Influence of Growth Temperature on Electrical Characteristics of Silicon Doped GaN Grown by LP-MOVPE.” In Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic, 61–63.
APA
Bougrioua, Z., Moerman, I., Demeester, P., THRUSH, E., GUYAUX, J., & GARCIA, J. (1999). Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE. Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic (pp. 61–63).
Vancouver
1.
Bougrioua Z, Moerman I, Demeester P, THRUSH E, GUYAUX J, GARCIA J. Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE. Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. 1999. p. 61–3.
MLA
Bougrioua, Zahia, Ingrid Moerman, Piet Demeester, et al. “Influence of Growth Temperature on Electrical Characteristics of Silicon Doped GaN Grown by LP-MOVPE.” Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. 1999. 61–63. Print.