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Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.

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Chicago
Bougrioua, Zahia, Ingrid Moerman, Piet Demeester, EJ THRUSH, JL GUYAUX, and JC GARCIA. 1999. “Influence of Growth Temperature on Electrical Characteristics of Silicon Doped GaN Grown by LP-MOVPE.” In Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic, 61–63.
APA
Bougrioua, Z., Moerman, I., Demeester, P., THRUSH, E., GUYAUX, J., & GARCIA, J. (1999). Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE. Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic (pp. 61–63).
Vancouver
1.
Bougrioua Z, Moerman I, Demeester P, THRUSH E, GUYAUX J, GARCIA J. Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE. Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. 1999. p. 61–3.
MLA
Bougrioua, Zahia, Ingrid Moerman, Piet Demeester, et al. “Influence of Growth Temperature on Electrical Characteristics of Silicon Doped GaN Grown by LP-MOVPE.” Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. 1999. 61–63. Print.
@inproceedings{116851,
  author       = {Bougrioua, Zahia and Moerman, Ingrid and Demeester, Piet and THRUSH, EJ and GUYAUX, JL and GARCIA, JC},
  booktitle    = {Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic},
  language     = {eng},
  pages        = {61--63},
  title        = {Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.},
  year         = {1999},
}