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Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.

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Chicago
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, and EJ THRUSH. “Electrical Characteristics of N-type GaN Grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, P. 16.” In .
APA
Bougrioua, Z., FARVACQUE, J., Moerman, I., & THRUSH, E. (n.d.). Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.
Vancouver
1.
Bougrioua Z, FARVACQUE J, Moerman I, THRUSH E. Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.
MLA
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, et al. “Electrical Characteristics of N-type GaN Grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, P. 16.” Print.
@inproceedings{116847,
  author       = {Bougrioua, Zahia and FARVACQUE, JL and Moerman, Ingrid and THRUSH, EJ},
  language     = {eng},
  title        = {Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abb{\`e}s, Algeria, p. 16.},
}