Ghent University Academic Bibliography

Advanced

Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.

Zahia Bougrioua, JL FARVACQUE, Ingrid Moerman UGent, Piet Demeester UGent, JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV and EJ THRUSH (1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.571-576
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Phys. Status Solidi B-Basic Res.
volume
216
issue
1
pages
571-576 pages
Web of Science type
Article
Web of Science id
000084193900110
ISSN
0370-1972
language
English
UGent publication?
yes
classification
A1
id
116839
handle
http://hdl.handle.net/1854/LU-116839
date created
2004-01-14 13:35:00
date last changed
2016-12-19 15:37:16
@article{116839,
  author       = {Bougrioua, Zahia and FARVACQUE, JL and Moerman, Ingrid and Demeester, Piet and HARRIS, JJ and LEE, K and VAN TENDELOO, G and LEBEDEV, O and THRUSH, EJ},
  issn         = {0370-1972},
  journal      = {PHYSICA STATUS SOLIDI B-BASIC RESEARCH},
  language     = {eng},
  number       = {1},
  pages        = {571--576},
  title        = {Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.},
  volume       = {216},
  year         = {1999},
}

Chicago
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, Piet Demeester, JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV, and EJ THRUSH. 1999. “Mobility Collapse in Undoped and Si-doped GaN Grown by LP-MOVPE.” Physica Status Solidi B-basic Research 216 (1): 571–576.
APA
Bougrioua, Z., FARVACQUE, J., Moerman, I., Demeester, P., HARRIS, J., LEE, K., VAN TENDELOO, G., et al. (1999). Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 216(1), 571–576.
Vancouver
1.
Bougrioua Z, FARVACQUE J, Moerman I, Demeester P, HARRIS J, LEE K, et al. Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 1999;216(1):571–6.
MLA
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, et al. “Mobility Collapse in Undoped and Si-doped GaN Grown by LP-MOVPE.” PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216.1 (1999): 571–576. Print.