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Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.

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Chicago
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, Piet Demeester, JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV, and EJ THRUSH. 1999. “Mobility Collapse in Undoped and Si-doped GaN Grown by LP-MOVPE.” Physica Status Solidi B-basic Research 216 (1): 571–576.
APA
Bougrioua, Z., FARVACQUE, J., Moerman, I., Demeester, P., HARRIS, J., LEE, K., VAN TENDELOO, G., et al. (1999). Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 216(1), 571–576.
Vancouver
1.
Bougrioua Z, FARVACQUE J, Moerman I, Demeester P, HARRIS J, LEE K, et al. Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 1999;216(1):571–6.
MLA
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, et al. “Mobility Collapse in Undoped and Si-doped GaN Grown by LP-MOVPE.” PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216.1 (1999): 571–576. Print.
@article{116839,
  author       = {Bougrioua, Zahia and FARVACQUE, JL and Moerman, Ingrid and Demeester, Piet and HARRIS, JJ and LEE, K and VAN TENDELOO, G and LEBEDEV, O and THRUSH, EJ},
  issn         = {0370-1972},
  journal      = {PHYSICA STATUS SOLIDI B-BASIC RESEARCH},
  language     = {eng},
  number       = {1},
  pages        = {571--576},
  title        = {Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.},
  volume       = {216},
  year         = {1999},
}

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