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Chicago
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, Piet Demeester, JJ HARRIS, K LEE, G VAN TENDELOO, O LEBEDEV, and EJ THRUSH. 1999. “Theoretical Analysis of Electrical Transport in Undoped and Si Doped GaN Grown by LP-MOVPE.” In Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France, 124.
APA
Bougrioua, Z., FARVACQUE, J., Moerman, I., Demeester, P., HARRIS, J., LEE, K., VAN TENDELOO, G., et al. (1999). Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France (p. 124).
Vancouver
1.
Bougrioua Z, FARVACQUE J, Moerman I, Demeester P, HARRIS J, LEE K, et al. Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE. Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. p. 124.
MLA
Bougrioua, Zahia, JL FARVACQUE, Ingrid Moerman, et al. “Theoretical Analysis of Electrical Transport in Undoped and Si Doped GaN Grown by LP-MOVPE.” Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. 1999. 124. Print.
@inproceedings{116831,
  author       = {Bougrioua, Zahia and FARVACQUE, JL and Moerman, Ingrid and Demeester, Piet and HARRIS, JJ and LEE, K and VAN TENDELOO, G and LEBEDEV, O and THRUSH, EJ},
  booktitle    = {Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France},
  language     = {eng},
  pages        = {124},
  title        = {Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE.},
  year         = {1999},
}