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III-V on dissimilar substrates: epitaxy and alternatives

J De Boeck, Piet Demeester UGent and G Borghs (1994) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. In INSTITUTE OF PHYSICS CONFERENCE SERIES 12(4). p.995-1002
abstract
The technological processes that share the goal of combining dissimilar (III-V and Si) semiconductor materials on a single substrate in order to achieve enhanced performance and functionality of devices and circuits is reviewed. In particular, these techniques that enable monolithic solutions based on the fabrication of thin crystalline III-V films on a dissimilar substrate are addressed. This fabrication process can be completed by heteroepitaxial growth or thin-film transfer and the present state of these techniques is discussed. Here, III-V on Si is used as a generic example of heteroepitaxy and it is found that research is still largely focusing on the materials quality. However, creative materials engineering is displayed to assure a steady progress toward applicability. Thin-film transfer technology is currently tackling more processing related issues. It will be shown that heteroepitaxy is competing for some (large area) applications and that for other, often very appealing applications thin-film transfer is the only solution, offering high flexibility and exciting combinations of materials and functions. Besides these thin-film-based technologies, hybrid flip-chip is also a mature candidate for integration of optical and electronic functions.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
QUANTUM EFFICIENCY, LITHIUM-NIOBATE, LIGHT-EMITTING-DIODES, MOLECULAR-BEAM EPITAXY, SI SUBSTRATE, HIGH-QUALITY GAAS, LIFT-OFF, HETEROSTRUCTURE LASERS, WAVE-GUIDES, GROWTH AREA
journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
J. Vac. Sci. Technol. A-Vac. Surf. Films
series title
INSTITUTE OF PHYSICS CONFERENCE SERIES
volume
12
issue
4
pages
995 - 1002
conference name
40th National symposium of the American Vacuum Society
conference location
Orlando, FL, USA
conference start
1993-11-15
conference end
1993-11-19
Web of Science type
Article; Proceedings Paper
ISSN
0734-2101
DOI
10.1116/1.579078
language
English
UGent publication?
no
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1161843
handle
http://hdl.handle.net/1854/LU-1161843
date created
2011-02-21 10:38:57
date last changed
2016-12-19 15:46:38
@article{1161843,
  abstract     = {The technological processes that share the goal of combining dissimilar (III-V and Si) semiconductor materials on a single substrate in order to achieve enhanced performance and functionality of devices and circuits is reviewed. In particular, these techniques that enable monolithic solutions based on the fabrication of thin crystalline III-V films on a dissimilar substrate are addressed. This fabrication process can be completed by heteroepitaxial growth or thin-film transfer and the present state of these techniques is discussed. Here, III-V on Si is used as a generic example of heteroepitaxy and it is found that research is still largely focusing on the materials quality. However, creative materials engineering is displayed to assure a steady progress toward applicability. Thin-film transfer technology is currently tackling more processing related issues. It will be shown that heteroepitaxy is competing for some (large area) applications and that for other, often very appealing applications thin-film transfer is the only solution, offering high flexibility and exciting combinations of materials and functions. Besides these thin-film-based technologies, hybrid flip-chip is also a mature candidate for integration of optical and electronic functions.},
  author       = {De Boeck, J and Demeester, Piet and Borghs, G},
  issn         = {0734-2101},
  journal      = {JOURNAL OF VACUUM SCIENCE \& TECHNOLOGY A-VACUUM SURFACES AND FILMS},
  keyword      = {QUANTUM EFFICIENCY,LITHIUM-NIOBATE,LIGHT-EMITTING-DIODES,MOLECULAR-BEAM EPITAXY,SI SUBSTRATE,HIGH-QUALITY GAAS,LIFT-OFF,HETEROSTRUCTURE LASERS,WAVE-GUIDES,GROWTH AREA},
  language     = {eng},
  location     = {Orlando, FL, USA},
  number       = {4},
  pages        = {995--1002},
  title        = {III-V on dissimilar substrates: epitaxy and alternatives},
  url          = {http://dx.doi.org/10.1116/1.579078},
  volume       = {12},
  year         = {1994},
}
Chicago
De Boeck, J, Piet Demeester, and G Borghs. 1994. “III-V on Dissimilar Substrates: Epitaxy and Alternatives.” Journal of Vacuum Science & Technology A-vacuum Surfaces and Films 12 (4): 995–1002.
APA
De Boeck, J., Demeester, P., & Borghs, G. (1994). III-V on dissimilar substrates: epitaxy and alternatives. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 12(4), 995–1002. Presented at the 40th National symposium of the American Vacuum Society.
Vancouver
1.
De Boeck J, Demeester P, Borghs G. III-V on dissimilar substrates: epitaxy and alternatives. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. 1994;12(4):995–1002.
MLA
De Boeck, J, Piet Demeester, and G Borghs. “III-V on Dissimilar Substrates: Epitaxy and Alternatives.” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 12.4 (1994): 995–1002. Print.