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Optimization of ion implantation condition for depletion-type silicon optical modulators

Hui Yu (UGent), Wim Bogaerts (UGent) and An De Keersgieter
(2010) IEEE JOURNAL OF QUANTUM ELECTRONICS. 46(12). p.1763-1768
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Abstract
We study the influence of ion implantation conditions on the performance of depletion-type silicon optical modulators by a combined simulation of the process flow, the electrical characteristic, and the beam propagation. Through calculations using different implantation positions, energies, and tilt angles, this paper reveals that a gap between specific implantation windows is able to alleviate the modulation efficiency degradation due to the lateral straggling of implanted ions, while a tilt angle reduces the optical loss without harming the modulation efficiency. After an optimization of the implantation condition, the extinction ratio of the Mach-Zehnder modulator can be improved by 4.6 dB, while its optical loss falls from 3 to 2.47 dB. Finally, a simplified doping pattern that eliminates two implantation steps is discussed.
Keywords
Device modeling, ion implantation, optical modulation, plasma-dispersion effect, silicon photonics, WAVE-GUIDE MODULATOR, CARRIER DEPLETION, ELECTROOPTIC MODULATOR, PN DIODE, COMP

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Citation

Please use this url to cite or link to this publication:

Chicago
Yu, Hui, Wim Bogaerts, and An De Keersgieter. 2010. “Optimization of Ion Implantation Condition for Depletion-type Silicon Optical Modulators.” Ieee Journal of Quantum Electronics 46 (12): 1763–1768.
APA
Yu, Hui, Bogaerts, W., & De Keersgieter, A. (2010). Optimization of ion implantation condition for depletion-type silicon optical modulators. IEEE JOURNAL OF QUANTUM ELECTRONICS, 46(12), 1763–1768.
Vancouver
1.
Yu H, Bogaerts W, De Keersgieter A. Optimization of ion implantation condition for depletion-type silicon optical modulators. IEEE JOURNAL OF QUANTUM ELECTRONICS. 2010;46(12):1763–8.
MLA
Yu, Hui, Wim Bogaerts, and An De Keersgieter. “Optimization of Ion Implantation Condition for Depletion-type Silicon Optical Modulators.” IEEE JOURNAL OF QUANTUM ELECTRONICS 46.12 (2010): 1763–1768. Print.
@article{1155304,
  abstract     = {We study the influence of ion implantation conditions on the performance of depletion-type silicon optical modulators by a combined simulation of the process flow, the electrical characteristic, and the beam propagation. Through calculations using different implantation positions, energies, and tilt angles, this paper reveals that a gap between specific implantation windows is able to alleviate the modulation efficiency degradation due to the lateral straggling of implanted ions, while a tilt angle reduces the optical loss without harming the modulation efficiency. After an optimization of the implantation condition, the extinction ratio of the Mach-Zehnder modulator can be improved by 4.6 dB, while its optical loss falls from 3 to 2.47 dB. Finally, a simplified doping pattern that eliminates two implantation steps is discussed.},
  author       = {Yu, Hui and Bogaerts, Wim and De Keersgieter, An},
  issn         = {0018-9197},
  journal      = {IEEE JOURNAL OF QUANTUM ELECTRONICS},
  keyword      = {Device modeling,ion implantation,optical modulation,plasma-dispersion effect,silicon photonics,WAVE-GUIDE MODULATOR,CARRIER DEPLETION,ELECTROOPTIC MODULATOR,PN DIODE,COMP},
  language     = {eng},
  number       = {12},
  pages        = {1763--1768},
  title        = {Optimization of ion implantation condition for depletion-type silicon optical modulators},
  url          = {http://dx.doi.org/10.1109/JQE.2010.2067206},
  volume       = {46},
  year         = {2010},
}

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