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High efficiency broadband polarization rotator on silicon-on-insulator

Diedrik Vermeulen UGent, shankar kumar Selvaraja UGent, P Verheyen, Wim Bogaerts UGent, Dries Van Thourhout UGent and Günther Roelkens UGent (2010) IEEE International Conference on Group IV Photonics. p.42-44
abstract
We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.
Please use this url to cite or link to this publication:
author
organization
year
type
conference (proceedingsPaper)
publication status
published
subject
keyword
silicon-on-insulator, ultraviolet lithography, broadband networks, CMOS integrated circuits
in
IEEE International Conference on Group IV Photonics
issue title
2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)
pages
42 - 44
publisher
IEEE
place of publication
Piscataway, NJ, USA
conference name
7th IEEE International conference on Group IV Photonics (GFP 2010)
conference location
Beijing, PR China
conference start
2010-09-01
conference end
2010-09-03
Web of Science type
Proceedings Paper
Web of Science id
000300485500015
ISSN
1949-2081
DOI
10.1109/GROUP4.2010.5643432
language
English
UGent publication?
yes
classification
P1
additional info
ATTENTION: title of author's version (PDF) differs from the title of the paper as it was eventually published
copyright statement
I have transferred the copyright for this publication to the publisher
id
1150688
handle
http://hdl.handle.net/1854/LU-1150688
date created
2011-02-15 10:46:20
date last changed
2017-01-02 09:52:28
@inproceedings{1150688,
  abstract     = {We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.},
  author       = {Vermeulen, Diedrik and Selvaraja, shankar kumar and Verheyen, P and Bogaerts, Wim and Van Thourhout, Dries and Roelkens, G{\"u}nther},
  booktitle    = {IEEE International Conference on Group IV Photonics},
  issn         = {1949-2081},
  keyword      = {silicon-on-insulator,ultraviolet lithography,broadband networks,CMOS integrated circuits},
  language     = {eng},
  location     = {Beijing, PR China},
  pages        = {42--44},
  publisher    = {IEEE},
  title        = {High efficiency broadband polarization rotator on silicon-on-insulator},
  url          = {http://dx.doi.org/10.1109/GROUP4.2010.5643432},
  year         = {2010},
}

Chicago
Vermeulen, Diedrik, shankar kumar Selvaraja, P Verheyen, Wim Bogaerts, Dries Van Thourhout, and Günther Roelkens. 2010. “High Efficiency Broadband Polarization Rotator on Silicon-on-insulator.” In IEEE International Conference on Group IV Photonics, 42–44. Piscataway, NJ, USA: IEEE.
APA
Vermeulen, D., Selvaraja, shankar kumar, Verheyen, P., Bogaerts, W., Van Thourhout, D., & Roelkens, G. (2010). High efficiency broadband polarization rotator on silicon-on-insulator. IEEE International Conference on Group IV Photonics (pp. 42–44). Presented at the 7th IEEE International conference on Group IV Photonics (GFP 2010), Piscataway, NJ, USA: IEEE.
Vancouver
1.
Vermeulen D, Selvaraja shankar kumar, Verheyen P, Bogaerts W, Van Thourhout D, Roelkens G. High efficiency broadband polarization rotator on silicon-on-insulator. IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE; 2010. p. 42–4.
MLA
Vermeulen, Diedrik, shankar kumar Selvaraja, P Verheyen, et al. “High Efficiency Broadband Polarization Rotator on Silicon-on-insulator.” IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE, 2010. 42–44. Print.