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High efficiency broadband polarization rotator on silicon-on-insulator

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Abstract
We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.
Keywords
silicon-on-insulator, ultraviolet lithography, broadband networks, CMOS integrated circuits

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Citation

Please use this url to cite or link to this publication:

Chicago
Vermeulen, Diedrik, shankar kumar Selvaraja, P Verheyen, Wim Bogaerts, Dries Van Thourhout, and Günther Roelkens. 2010. “High Efficiency Broadband Polarization Rotator on Silicon-on-insulator.” In IEEE International Conference on Group IV Photonics, 42–44. Piscataway, NJ, USA: IEEE.
APA
Vermeulen, Diedrik, Selvaraja, shankar kumar, Verheyen, P., Bogaerts, W., Van Thourhout, D., & Roelkens, G. (2010). High efficiency broadband polarization rotator on silicon-on-insulator. IEEE International Conference on Group IV Photonics (pp. 42–44). Presented at the 7th IEEE International conference on Group IV Photonics (GFP 2010), Piscataway, NJ, USA: IEEE.
Vancouver
1.
Vermeulen D, Selvaraja shankar kumar, Verheyen P, Bogaerts W, Van Thourhout D, Roelkens G. High efficiency broadband polarization rotator on silicon-on-insulator. IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE; 2010. p. 42–4.
MLA
Vermeulen, Diedrik, shankar kumar Selvaraja, P Verheyen, et al. “High Efficiency Broadband Polarization Rotator on Silicon-on-insulator.” IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE, 2010. 42–44. Print.
@inproceedings{1150688,
  abstract     = {We demonstrate a polarization rotator fabricated using a 4 etch-step CMOS-compatible process including layer depositions on a silicon-on-insulator wafer by means of 193nm deep UV lithography. The measured polarization rotation efficiency is at least -0.5dB over a wavelength range of 80nm around 1550nm.},
  author       = {Vermeulen, Diedrik and Selvaraja, shankar kumar and Verheyen, P and Bogaerts, Wim and Van Thourhout, Dries and Roelkens, G{\"u}nther},
  booktitle    = {IEEE International Conference on Group IV Photonics},
  issn         = {1949-2081},
  keyword      = {silicon-on-insulator,ultraviolet lithography,broadband networks,CMOS integrated circuits},
  language     = {eng},
  location     = {Beijing, PR China},
  pages        = {42--44},
  publisher    = {IEEE},
  title        = {High efficiency broadband polarization rotator on silicon-on-insulator},
  url          = {http://dx.doi.org/10.1109/GROUP4.2010.5643432},
  year         = {2010},
}

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