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Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides

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Abstract
In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10 μ m long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it suitable for intra-chip optical interconnect networks. We report on the design and preliminary characterization of this novel type of high-index contrast nanophotonic device.
Keywords
optical pumping, optical waveguides, optical design techniques, nanophotonics, integrated optics, indium compounds, III-V semiconductors, CMOS integrated circuits, gallium arsenide, semiconductor optical amplifiers, silicon-on-insulator, wafer bonding

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Citation

Please use this url to cite or link to this publication:

Chicago
Roelkens, Günther, O Raz, WMJ Green, S Assefa, Martijn Tassaert, Shahram Keyvaninia, Kristof Vandoorne, Dries Van Thourhout, Roel Baets, and Y Vlasov. 2010. “Towards a Low-power Nanophotonic Semiconductor Amplifier Heterogeneously Integrated with SOI Waveguides.” In IEEE International Conference on Group IV Photonics, 16–18. Piscataway, NJ, USA: IEEE.
APA
Roelkens, G., Raz, O., Green, W., Assefa, S., Tassaert, M., Keyvaninia, S., Vandoorne, K., et al. (2010). Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides. IEEE International Conference on Group IV Photonics (pp. 16–18). Presented at the 7th IEEE International conference on Group IV Photonics (GFP 2010), Piscataway, NJ, USA: IEEE.
Vancouver
1.
Roelkens G, Raz O, Green W, Assefa S, Tassaert M, Keyvaninia S, et al. Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides. IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE; 2010. p. 16–8.
MLA
Roelkens, Günther, O Raz, WMJ Green, et al. “Towards a Low-power Nanophotonic Semiconductor Amplifier Heterogeneously Integrated with SOI Waveguides.” IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE, 2010. 16–18. Print.
@inproceedings{1150676,
  abstract     = {In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10 \ensuremath{\mu} m long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it suitable for intra-chip optical interconnect networks. We report on the design and preliminary characterization of this novel type of high-index contrast nanophotonic device.},
  author       = {Roelkens, G{\"u}nther and Raz, O and Green, WMJ and Assefa, S and Tassaert, Martijn and Keyvaninia, Shahram and Vandoorne, Kristof and Van Thourhout, Dries and Baets, Roel and Vlasov, Y},
  booktitle    = {IEEE International Conference on Group IV Photonics},
  isbn         = {9781424463466},
  issn         = {1949-2081},
  keyword      = {optical pumping,optical waveguides,optical design techniques,nanophotonics,integrated optics,indium compounds,III-V semiconductors,CMOS integrated circuits,gallium arsenide,semiconductor optical amplifiers,silicon-on-insulator,wafer bonding},
  language     = {eng},
  location     = {Beijing, PR China},
  pages        = {16--18},
  publisher    = {IEEE},
  title        = {Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides},
  url          = {http://dx.doi.org/10.1109/GROUP4.2010.5643443},
  year         = {2010},
}

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