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Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

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SI, IMPURITIES, ANNEALING BEHAVIOR, DLTS, germanium doping, irradiation induced defect, Czochralski silicon, GENERATION, DETECTORS, RESONANCE, PROTON, CARBON, OXYGEN

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Chicago
Chen, Jiahe, Jan Vanhellemont, Eddy Simoen, Johan Lauwaert, Henk Vrielinck, Joan Marc Rafi, Hidenori Ohyama, Jörg Weber, and Deren Yang. 2011. “Electron Irradiation Induced Defects in Germanium-doped Czochralski Silicon Substrates and Diodes.” In Physica Status Solidi C-Current Topics in Solid State Physics, ed. G Kissinger, S Pizzini, H Tu, and H Yamada Kaneta, 8:674–677. Weinheim, Germany: Wiley-VCH.
APA
Chen, Jiahe, Vanhellemont, J., Simoen, E., Lauwaert, J., Vrielinck, H., Rafi, J. M., Ohyama, H., et al. (2011). Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. In G Kissinger, S. Pizzini, H. Tu, & H. Yamada Kaneta (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 8, pp. 674–677). Presented at the 2010 Spring meeting of the European Materials Research Society (E-MRS) ; Symposium I on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II ; Symposium J on Silicon-Based Nanophotonics, Weinheim, Germany: Wiley-VCH.
Vancouver
1.
Chen J, Vanhellemont J, Simoen E, Lauwaert J, Vrielinck H, Rafi JM, et al. Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. In: Kissinger G, Pizzini S, Tu H, Yamada Kaneta H, editors. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2011. p. 674–7.
MLA
Chen, Jiahe, Jan Vanhellemont, Eddy Simoen, et al. “Electron Irradiation Induced Defects in Germanium-doped Czochralski Silicon Substrates and Diodes.” Physica Status Solidi C-Current Topics in Solid State Physics. Ed. G Kissinger et al. Vol. 8. Weinheim, Germany: Wiley-VCH, 2011. 674–677. Print.
@inproceedings{1147717,
  author       = {Chen, Jiahe and Vanhellemont, Jan and Simoen, Eddy and Lauwaert, Johan and Vrielinck, Henk and Rafi, Joan Marc and Ohyama, Hidenori and Weber, J{\"o}rg and Yang, Deren},
  booktitle    = {Physica Status Solidi C-Current Topics in Solid State Physics},
  editor       = {Kissinger, G and Pizzini, S and Tu, H and Yamada Kaneta, H},
  issn         = {1862-6351},
  keyword      = {SI,IMPURITIES,ANNEALING BEHAVIOR,DLTS,germanium doping,irradiation induced defect,Czochralski silicon,GENERATION,DETECTORS,RESONANCE,PROTON,CARBON,OXYGEN},
  language     = {eng},
  location     = {Strasbourg, France},
  number       = {3},
  pages        = {674--677},
  publisher    = {Wiley-VCH},
  title        = {Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes},
  url          = {http://dx.doi.org/10.1002/pssc.201000142},
  volume       = {8},
  year         = {2011},
}

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