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Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

Jiahe Chen, Jan Vanhellemont UGent, Eddy Simoen, Johan Lauwaert UGent, Henk Vrielinck UGent, Joan Marc Rafi, Hidenori Ohyama, Jörg Weber and Deren Yang (2011) Physica Status Solidi C-Current Topics in Solid State Physics. 8(3). p.674-677
Please use this url to cite or link to this publication:
author
organization
year
type
conference (proceedingsPaper)
publication status
published
subject
keyword
SI, IMPURITIES, ANNEALING BEHAVIOR, DLTS, germanium doping, irradiation induced defect, Czochralski silicon, GENERATION, DETECTORS, RESONANCE, PROTON, CARBON, OXYGEN
in
Physica Status Solidi C-Current Topics in Solid State Physics
Phys. Status Solidi C Curr. Top. Solid State Phys.
editor
G Kissinger, S Pizzini, H Tu and H Yamada Kaneta
volume
8
issue
3
pages
674 - 677
publisher
Wiley-VCH
place of publication
Weinheim, Germany
conference name
2010 Spring meeting of the European Materials Research Society (E-MRS) ; Symposium I on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II ; Symposium J on Silicon-Based Nanophotonics
conference location
Strasbourg, France
conference start
2010-06-08
conference end
2010-06-11
Web of Science type
Proceedings Paper
Web of Science id
000301537100006
ISSN
1862-6351
DOI
10.1002/pssc.201000142
language
English
UGent publication?
yes
classification
P1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1147717
handle
http://hdl.handle.net/1854/LU-1147717
date created
2011-02-11 15:09:02
date last changed
2017-04-28 13:11:38
@inproceedings{1147717,
  author       = {Chen, Jiahe and Vanhellemont, Jan and Simoen, Eddy and Lauwaert, Johan and Vrielinck, Henk and Rafi, Joan Marc and Ohyama, Hidenori and Weber, J{\"o}rg and Yang, Deren},
  booktitle    = {Physica Status Solidi C-Current Topics in Solid State Physics},
  editor       = {Kissinger, G and Pizzini, S and Tu, H and Yamada Kaneta, H},
  issn         = {1862-6351},
  keyword      = {SI,IMPURITIES,ANNEALING BEHAVIOR,DLTS,germanium doping,irradiation induced defect,Czochralski silicon,GENERATION,DETECTORS,RESONANCE,PROTON,CARBON,OXYGEN},
  language     = {eng},
  location     = {Strasbourg, France},
  number       = {3},
  pages        = {674--677},
  publisher    = {Wiley-VCH},
  title        = {Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes},
  url          = {http://dx.doi.org/10.1002/pssc.201000142},
  volume       = {8},
  year         = {2011},
}

Chicago
Chen, Jiahe, Jan Vanhellemont, Eddy Simoen, Johan Lauwaert, Henk Vrielinck, Joan Marc Rafi, Hidenori Ohyama, Jörg Weber, and Deren Yang. 2011. “Electron Irradiation Induced Defects in Germanium-doped Czochralski Silicon Substrates and Diodes.” In Physica Status Solidi C-Current Topics in Solid State Physics, ed. G Kissinger, S Pizzini, H Tu, and H Yamada Kaneta, 8:674–677. Weinheim, Germany: Wiley-VCH.
APA
Chen, Jiahe, Vanhellemont, J., Simoen, E., Lauwaert, J., Vrielinck, H., Rafi, J. M., Ohyama, H., et al. (2011). Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. In G Kissinger, S. Pizzini, H. Tu, & H. Yamada Kaneta (Eds.), Physica Status Solidi C-Current Topics in Solid State Physics (Vol. 8, pp. 674–677). Presented at the 2010 Spring meeting of the European Materials Research Society (E-MRS) ; Symposium I on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II ; Symposium J on Silicon-Based Nanophotonics, Weinheim, Germany: Wiley-VCH.
Vancouver
1.
Chen J, Vanhellemont J, Simoen E, Lauwaert J, Vrielinck H, Rafi JM, et al. Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes. In: Kissinger G, Pizzini S, Tu H, Yamada Kaneta H, editors. Physica Status Solidi C-Current Topics in Solid State Physics. Weinheim, Germany: Wiley-VCH; 2011. p. 674–7.
MLA
Chen, Jiahe, Jan Vanhellemont, Eddy Simoen, et al. “Electron Irradiation Induced Defects in Germanium-doped Czochralski Silicon Substrates and Diodes.” Physica Status Solidi C-Current Topics in Solid State Physics. Ed. G Kissinger et al. Vol. 8. Weinheim, Germany: Wiley-VCH, 2011. 674–677. Print.