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10-GHz all-optical gate based on a III-V/SOI microdisk

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Abstract
We demonstrate an ultrafast and low-power all-optical gate in pump-probe configuration based on free-carrier-induced refractive index modulation in a 5-mu m radius InP-InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High-speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.
Keywords
RESONATORS, CHIP, SILICON-ON-INSULATOR

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Citation

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MLA
Kumar, Rajesh, et al. “10-GHz All-Optical Gate Based on a III-V/SOI Microdisk.” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 22, no. 13, 2010, pp. 981–83, doi:10.1109/LPT.2010.2048895.
APA
Kumar, R., Liu, L., Roelkens, G., Geluk, E.-J., de Vries, T., Karouta, F., … Morthier, G. (2010). 10-GHz all-optical gate based on a III-V/SOI microdisk. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(13), 981–983. https://doi.org/10.1109/LPT.2010.2048895
Chicago author-date
Kumar, Rajesh, Liu Liu, Günther Roelkens, Erik-Jan Geluk, Tjibbe de Vries, Fouad Karouta, Philippe Regreny, Dries Van Thourhout, Roel Baets, and Geert Morthier. 2010. “10-GHz All-Optical Gate Based on a III-V/SOI Microdisk.” IEEE PHOTONICS TECHNOLOGY LETTERS 22 (13): 981–83. https://doi.org/10.1109/LPT.2010.2048895.
Chicago author-date (all authors)
Kumar, Rajesh, Liu Liu, Günther Roelkens, Erik-Jan Geluk, Tjibbe de Vries, Fouad Karouta, Philippe Regreny, Dries Van Thourhout, Roel Baets, and Geert Morthier. 2010. “10-GHz All-Optical Gate Based on a III-V/SOI Microdisk.” IEEE PHOTONICS TECHNOLOGY LETTERS 22 (13): 981–983. doi:10.1109/LPT.2010.2048895.
Vancouver
1.
Kumar R, Liu L, Roelkens G, Geluk E-J, de Vries T, Karouta F, et al. 10-GHz all-optical gate based on a III-V/SOI microdisk. IEEE PHOTONICS TECHNOLOGY LETTERS. 2010;22(13):981–3.
IEEE
[1]
R. Kumar et al., “10-GHz all-optical gate based on a III-V/SOI microdisk,” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 22, no. 13, pp. 981–983, 2010.
@article{1146693,
  abstract     = {{We demonstrate an ultrafast and low-power all-optical gate in pump-probe configuration based on free-carrier-induced refractive index modulation in a 5-mu m radius InP-InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High-speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.}},
  author       = {{Kumar, Rajesh and Liu, Liu and Roelkens, Günther and Geluk, Erik-Jan and de Vries, Tjibbe and Karouta, Fouad and Regreny, Philippe and Van Thourhout, Dries and Baets, Roel and Morthier, Geert}},
  issn         = {{1041-1135}},
  journal      = {{IEEE PHOTONICS TECHNOLOGY LETTERS}},
  keywords     = {{RESONATORS,CHIP,SILICON-ON-INSULATOR}},
  language     = {{eng}},
  number       = {{13}},
  pages        = {{981--983}},
  title        = {{10-GHz all-optical gate based on a III-V/SOI microdisk}},
  url          = {{http://doi.org/10.1109/LPT.2010.2048895}},
  volume       = {{22}},
  year         = {{2010}},
}

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