Ghent University Academic Bibliography

Advanced

10-GHz all-optical gate based on a III-V/SOI microdisk

Rajesh Kumar, Liu Liu UGent, Günther Roelkens UGent, Erik-Jan Geluk, Tjibbe de Vries, Fouad Karouta, Philippe Regreny, Dries Van Thourhout UGent, Roel Baets UGent and Geert Morthier UGent (2010) IEEE PHOTONICS TECHNOLOGY LETTERS. 22(13). p.981-983
abstract
We demonstrate an ultrafast and low-power all-optical gate in pump-probe configuration based on free-carrier-induced refractive index modulation in a 5-mu m radius InP-InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High-speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
RESONATORS, CHIP, SILICON-ON-INSULATOR
journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
IEEE Photonics Technol. Lett.
volume
22
issue
13
pages
981 - 983
Web of Science type
Article
Web of Science id
000278811400002
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
1.987 (2010)
JCR rank
43/247 (2010)
JCR quartile
1 (2010)
ISSN
1041-1135
DOI
10.1109/LPT.2010.2048895
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1146693
handle
http://hdl.handle.net/1854/LU-1146693
date created
2011-02-11 10:48:51
date last changed
2016-12-19 15:46:03
@article{1146693,
  abstract     = {We demonstrate an ultrafast and low-power all-optical gate in pump-probe configuration based on free-carrier-induced refractive index modulation in a 5-mu m radius InP-InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High-speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.},
  author       = {Kumar, Rajesh and Liu, Liu and Roelkens, G{\"u}nther and Geluk, Erik-Jan and de Vries, Tjibbe and Karouta, Fouad and Regreny, Philippe and Van Thourhout, Dries and Baets, Roel and Morthier, Geert},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  keyword      = {RESONATORS,CHIP,SILICON-ON-INSULATOR},
  language     = {eng},
  number       = {13},
  pages        = {981--983},
  title        = {10-GHz all-optical gate based on a III-V/SOI microdisk},
  url          = {http://dx.doi.org/10.1109/LPT.2010.2048895},
  volume       = {22},
  year         = {2010},
}

Chicago
Kumar, Rajesh, Liu Liu, Günther Roelkens, Erik-Jan Geluk, Tjibbe de Vries, Fouad Karouta, Philippe Regreny, Dries Van Thourhout, Roel Baets, and Geert Morthier. 2010. “10-GHz All-optical Gate Based on a III-V/SOI Microdisk.” Ieee Photonics Technology Letters 22 (13): 981–983.
APA
Kumar, R., Liu, L., Roelkens, G., Geluk, E.-J., de Vries, T., Karouta, F., Regreny, P., et al. (2010). 10-GHz all-optical gate based on a III-V/SOI microdisk. IEEE PHOTONICS TECHNOLOGY LETTERS, 22(13), 981–983.
Vancouver
1.
Kumar R, Liu L, Roelkens G, Geluk E-J, de Vries T, Karouta F, et al. 10-GHz all-optical gate based on a III-V/SOI microdisk. IEEE PHOTONICS TECHNOLOGY LETTERS. 2010;22(13):981–3.
MLA
Kumar, Rajesh, Liu Liu, Günther Roelkens, et al. “10-GHz All-optical Gate Based on a III-V/SOI Microdisk.” IEEE PHOTONICS TECHNOLOGY LETTERS 22.13 (2010): 981–983. Print.