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Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

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Abstract
The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber.
Keywords
gallium compounds, III-V semiconductors, gallium arsenide, diffraction gratings, indium compounds, laser modes, optical pumping, photonic crystals, quantum well lasers, rib waveguides, silicon-on-insulator, wide band gap semiconductors, QUANTUM-WELL, BENZOCYCLOBUTENE, 1.55-MU-M, DYNAMICS, WAFER, DIES

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Citation

Please use this url to cite or link to this publication:

Chicago
Karle, TJ, Yacine Halioua, F Raineri, P Monnier, R Braive, L Le Gratiet, G Beaudoin, et al. 2010. “Heterogeneous Integration and Precise Alignment of InP-based Photonic Crystal Lasers to Complementary Metal-oxide Semiconductor Fabricated Silicon-on-insulator Wire Waveguides.” Journal of Applied Physics 107 (6).
APA
Karle, T., Halioua, Y., Raineri, F., Monnier, P., Braive, R., Le Gratiet, L., Beaudoin, G., et al. (2010). Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides. JOURNAL OF APPLIED PHYSICS, 107(6).
Vancouver
1.
Karle T, Halioua Y, Raineri F, Monnier P, Braive R, Le Gratiet L, et al. Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides. JOURNAL OF APPLIED PHYSICS. 2010;107(6).
MLA
Karle, TJ, Yacine Halioua, F Raineri, et al. “Heterogeneous Integration and Precise Alignment of InP-based Photonic Crystal Lasers to Complementary Metal-oxide Semiconductor Fabricated Silicon-on-insulator Wire Waveguides.” JOURNAL OF APPLIED PHYSICS 107.6 (2010): n. pag. Print.
@article{1144725,
  abstract     = {The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber.},
  articleno    = {063103},
  author       = {Karle, TJ and Halioua, Yacine and Raineri, F and Monnier, P and Braive, R and Le Gratiet, L and Beaudoin, G and Sagnes, I and Roelkens, G{\"u}nther and Van Laere, Frederik and Van Thourhout, Dries and Raj, R},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {gallium compounds,III-V semiconductors,gallium arsenide,diffraction gratings,indium compounds,laser modes,optical pumping,photonic crystals,quantum well lasers,rib waveguides,silicon-on-insulator,wide band gap semiconductors,QUANTUM-WELL,BENZOCYCLOBUTENE,1.55-MU-M,DYNAMICS,WAFER,DIES},
  language     = {eng},
  number       = {6},
  pages        = {8},
  title        = {Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides},
  url          = {http://dx.doi.org/10.1063/1.3319667},
  volume       = {107},
  year         = {2010},
}

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