Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed
- Author
- Katrien Strubbe (UGent) , Philippe Vereecken and Walter Gomes
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-112054
- MLA
- Strubbe, Katrien, et al. “Electroreduction of Co2+ and Ni2+ at III-V Semiconductors and Properties of the Semiconductor/Metal Interfaces Formed.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 4, 1999, pp. 1412–20.
- APA
- Strubbe, K., Vereecken, P., & Gomes, W. (1999). Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1412–1420.
- Chicago author-date
- Strubbe, Katrien, Philippe Vereecken, and Walter Gomes. 1999. “Electroreduction of Co2+ and Ni2+ at III-V Semiconductors and Properties of the Semiconductor/Metal Interfaces Formed.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (4): 1412–20.
- Chicago author-date (all authors)
- Strubbe, Katrien, Philippe Vereecken, and Walter Gomes. 1999. “Electroreduction of Co2+ and Ni2+ at III-V Semiconductors and Properties of the Semiconductor/Metal Interfaces Formed.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (4): 1412–1420.
- Vancouver
- 1.Strubbe K, Vereecken P, Gomes W. Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(4):1412–20.
- IEEE
- [1]K. Strubbe, P. Vereecken, and W. Gomes, “Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 4, pp. 1412–1420, 1999.
@article{112054,
author = {{Strubbe, Katrien and Vereecken, Philippe and Gomes, Walter}},
issn = {{0013-4651}},
journal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
language = {{eng}},
number = {{4}},
pages = {{1412--1420}},
title = {{Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed}},
volume = {{146}},
year = {{1999}},
}