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A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes.

(1999) SOLID STATE COMMUNICATIONS. 112(11). p.611-615
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Chicago
ZHU, S, Roland Vanmeirhaeghe, Christophe Detavernier, GP RU, BZ LI, and Felix Cardon. 1999. “A BEEM Study of the Temperature Dependence of the Barrier Height Distribution in PtSi/n-Si Schottky Diodes.” Solid State Communications 112 (11): 611–615.
APA
ZHU, S, Vanmeirhaeghe, R., Detavernier, C., RU, G., LI, B., & Cardon, F. (1999). A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes. SOLID STATE COMMUNICATIONS, 112(11), 611–615.
Vancouver
1.
ZHU S, Vanmeirhaeghe R, Detavernier C, RU G, LI B, Cardon F. A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes. SOLID STATE COMMUNICATIONS. 1999;112(11):611–5.
MLA
ZHU, S, Roland Vanmeirhaeghe, Christophe Detavernier, et al. “A BEEM Study of the Temperature Dependence of the Barrier Height Distribution in PtSi/n-Si Schottky Diodes.” SOLID STATE COMMUNICATIONS 112.11 (1999): 611–615. Print.
@article{111643,
  author       = {ZHU, S and Vanmeirhaeghe, Roland and Detavernier, Christophe and RU, GP and LI, BZ and Cardon, Felix},
  issn         = {0038-1098},
  journal      = {SOLID STATE COMMUNICATIONS},
  language     = {eng},
  number       = {11},
  pages        = {611--615},
  title        = {A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes.},
  volume       = {112},
  year         = {1999},
}

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