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The influence of Ti cappings layes on CoSi2 formation.

(2000) MICROELECTRONIC ENGINEERING. 50(1-4). p.125-132
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Chicago
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, RA DONATON, and K MAEX. 2000. “The Influence of Ti Cappings Layes on CoSi2 Formation.” Microelectronic Engineering 50 (1-4): 125–132.
APA
Detavernier, C., Vanmeirhaeghe, R., Cardon, F., DONATON, R., & MAEX, K. (2000). The influence of Ti cappings layes on CoSi2 formation. MICROELECTRONIC ENGINEERING, 50(1-4), 125–132.
Vancouver
1.
Detavernier C, Vanmeirhaeghe R, Cardon F, DONATON R, MAEX K. The influence of Ti cappings layes on CoSi2 formation. MICROELECTRONIC ENGINEERING. 2000;50(1-4):125–32.
MLA
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, et al. “The Influence of Ti Cappings Layes on CoSi2 Formation.” MICROELECTRONIC ENGINEERING 50.1-4 (2000): 125–132. Print.
@article{111586,
  author       = {Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix and DONATON, RA and MAEX, K},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  language     = {eng},
  number       = {1-4},
  pages        = {125--132},
  title        = {The influence of Ti cappings layes on CoSi2 formation.},
  volume       = {50},
  year         = {2000},
}

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