Advanced search

CoSi2 formation in the presence of interfacial silicon oxide.

(1999) APPLIED PHYSICS LETTERS. 74(20). p.2930-2932
Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, RA DONATON, and K MAEX. 1999. “CoSi2 Formation in the Presence of Interfacial Silicon Oxide.” Applied Physics Letters 74 (20): 2930–2932.
APA
Detavernier, C., Vanmeirhaeghe, R., Cardon, F., DONATON, R., & MAEX, K. (1999). CoSi2 formation in the presence of interfacial silicon oxide. APPLIED PHYSICS LETTERS, 74(20), 2930–2932.
Vancouver
1.
Detavernier C, Vanmeirhaeghe R, Cardon F, DONATON R, MAEX K. CoSi2 formation in the presence of interfacial silicon oxide. APPLIED PHYSICS LETTERS. 1999;74(20):2930–2.
MLA
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, et al. “CoSi2 Formation in the Presence of Interfacial Silicon Oxide.” APPLIED PHYSICS LETTERS 74.20 (1999): 2930–2932. Print.
@article{111582,
  author       = {Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix and DONATON, RA and MAEX, K},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {20},
  pages        = {2930--2932},
  title        = {CoSi2 formation in the presence of interfacial silicon oxide.},
  volume       = {74},
  year         = {1999},
}

Web of Science
Times cited: