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Steps towards a textile-based transistor: development of the gate and insulating layer

Anne Schwarz UGent, J Cardoen, Philippe Westbroek UGent, Lieva Van Langenhove UGent, Els Bruneel UGent, Isabel Van Driessche UGent and Jean De Dieu Hakuzimana (2010) TEXTILE RESEARCH JOURNAL. 80(16). p.1738-1746
abstract
During recent years, intensive research has been carried out in the area of electronic textiles. There is an emerging trend to create garments that host electronic components embedded in the textile substrate, as well as electronic textiles made from yarns or fibers already possessing electronic properties. The creation of passive devices, such as textile electrodes that measure body parameters, has proved successful. However, there is a great need for the development of textiles possessing additional active functions. Accordingly, we investigated the possibility of developing a textile substrate possessing integrated switching and amplification functions by depositing parts of an organic thin-film transistor on fibrous substrates of varying geometries and origins. This article relates the initial steps we employed to develop a textile-based thin-film transistor. It reports the development of a gate layer from the deposition of electroless copper, as well as the deposition of a polyimide dielectric layer using dip coating. Further, it discusses the layer's properties in terms of thickness and electrical characteristics. A copper layer of 350 nm thickness deposited on polyester tape and polyamide fibers displayed excellent electro-conductive properties. A smooth gate dielectric layer was achieved with a polyimide concentration of 15 w% and a withdrawal speed of 50 mm/min. As a result, optimum conditions for producing thin functional gate and dielectric layers were found. The transistor properties, the deposition of a semiconductive layer, and the production of drain and source electrodes remain the focus of future work.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
THIN-FILM TRANSISTORS, polyimide, electronic textiles, ORGANIC TRANSISTORS, FIELD-EFFECT TRANSISTORS, copper, coating, fiber, transistor, POLYIMIDE, CIRCUITS
journal title
TEXTILE RESEARCH JOURNAL
Text. Res. J.
volume
80
issue
16
pages
1738 - 1746
Web of Science type
Article
Web of Science id
000281952100011
JCR category
MATERIALS SCIENCE, TEXTILES
JCR impact factor
1.102 (2010)
JCR rank
3/21 (2010)
JCR quartile
1 (2010)
ISSN
0040-5175
DOI
10.1177/0040517510365948
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1060117
handle
http://hdl.handle.net/1854/LU-1060117
date created
2010-10-18 14:39:59
date last changed
2010-10-19 08:56:37
@article{1060117,
  abstract     = {During recent years, intensive research has been carried out in the area of electronic textiles. There is an emerging trend to create garments that host electronic components embedded in the textile substrate, as well as electronic textiles made from yarns or fibers already possessing electronic properties. The creation of passive devices, such as textile electrodes that measure body parameters, has proved successful. However, there is a great need for the development of textiles possessing additional active functions. Accordingly, we investigated the possibility of developing a textile substrate possessing integrated switching and amplification functions by depositing parts of an organic thin-film transistor on fibrous substrates of varying geometries and origins.
This article relates the initial steps we employed to develop a textile-based thin-film transistor. It reports the development of a gate layer from the deposition of electroless copper, as well as the deposition of a polyimide dielectric layer using dip coating. Further, it discusses the layer's properties in terms of thickness and electrical characteristics.
A copper layer of 350 nm thickness deposited on polyester tape and polyamide fibers displayed excellent electro-conductive properties. A smooth gate dielectric layer was achieved with a polyimide concentration of 15 w\% and a withdrawal speed of 50 mm/min. As a result, optimum conditions for producing thin functional gate and dielectric layers were found. The transistor properties, the deposition of a semiconductive layer, and the production of drain and source electrodes remain the focus of future work.},
  author       = {Schwarz, Anne and Cardoen, J and Westbroek, Philippe and Van Langenhove, Lieva and Bruneel, Els and Van Driessche, Isabel and Hakuzimana, Jean De Dieu},
  issn         = {0040-5175},
  journal      = {TEXTILE RESEARCH JOURNAL},
  keyword      = {THIN-FILM TRANSISTORS,polyimide,electronic textiles,ORGANIC TRANSISTORS,FIELD-EFFECT TRANSISTORS,copper,coating,fiber,transistor,POLYIMIDE,CIRCUITS},
  language     = {eng},
  number       = {16},
  pages        = {1738--1746},
  title        = {Steps towards a textile-based transistor: development of the gate and insulating layer},
  url          = {http://dx.doi.org/10.1177/0040517510365948},
  volume       = {80},
  year         = {2010},
}

Chicago
Schwarz, Anne, J Cardoen, Philippe Westbroek, Lieva Van Langenhove, Els Bruneel, Isabel Van Driessche, and Jean De Dieu Hakuzimana. 2010. “Steps Towards a Textile-based Transistor: Development of the Gate and Insulating Layer.” Textile Research Journal 80 (16): 1738–1746.
APA
Schwarz, A., Cardoen, J., Westbroek, P., Van Langenhove, L., Bruneel, E., Van Driessche, I., & Hakuzimana, J. D. D. (2010). Steps towards a textile-based transistor: development of the gate and insulating layer. TEXTILE RESEARCH JOURNAL, 80(16), 1738–1746.
Vancouver
1.
Schwarz A, Cardoen J, Westbroek P, Van Langenhove L, Bruneel E, Van Driessche I, et al. Steps towards a textile-based transistor: development of the gate and insulating layer. TEXTILE RESEARCH JOURNAL. 2010;80(16):1738–46.
MLA
Schwarz, Anne, J Cardoen, Philippe Westbroek, et al. “Steps Towards a Textile-based Transistor: Development of the Gate and Insulating Layer.” TEXTILE RESEARCH JOURNAL 80.16 (2010): 1738–1746. Print.