SiGe MEMS technology: a platform technology enabling different demonstrators
- Author
- Ann Witvrouw, Rita Van Hoof, George Bryce, Bert Du Bois, Agnes Verbist, Simone Severi, Luc Haspeslagh, Haris Osman, Jeroen De Coster, Lianggong Wen, Robert Puers, Roel Beernaert, Herbert De Smet (UGent) , Sukumar Rudra (UGent) and Dries Van Thourhout (UGent)
- Organization
- Abstract
- In imec's 200mm fab a dedicated poly-SiGe above-IC MEMS (Micro Electro-Mechanical Systems) platform has been set up to integrate MEMS and its readout and driving electronics on one chip. In the Flemish project Gemini the possibilities of this platform have been further explored together with the project partners. Three different demonstrators were realized: mirrors for display applications, grating light valves (GLV) and accelerometers. Whereas the mirrors and GLVs are made with a similar to 300 nm thick SiGe structural layer plus optical coating, the SiGe structural layer thickness for the accelerometers is 4 mu m in order to improve the capacitive readout of in-plane devices. The processing and measurement results of these functional demonstrators are shown in this paper. These new demonstrators reconfirm the generic nature of the SiGe MEMS platform.
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-1057335
- Chicago
- Witvrouw, Ann, Rita Van Hoof, George Bryce, Bert Du Bois, Agnes Verbist, Simone Severi, Luc Haspeslagh, et al. 2010. “SiGe MEMS Technology: a Platform Technology Enabling Different Demonstrators.” In ECS Transactions, ed. D Harame, J Boquet, M Östling, Y Yeo, G Masini, M Caymax, T Krishnamohan, et al., 33:799–812. Pennington, NJ, USA: Electrochemical Society (ECS).
- APA
- Witvrouw, A., Van Hoof, R., Bryce, G., Du Bois, B., Verbist, A., Severi, S., Haspeslagh, L., et al. (2010). SiGe MEMS technology: a platform technology enabling different demonstrators. In D Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, et al. (Eds.), ECS Transactions (Vol. 33, pp. 799–812). Presented at the 218th ECS Meeting, Pennington, NJ, USA: Electrochemical Society (ECS).
- Vancouver
- 1.Witvrouw A, Van Hoof R, Bryce G, Du Bois B, Verbist A, Severi S, et al. SiGe MEMS technology: a platform technology enabling different demonstrators. In: Harame D, Boquet J, Östling M, Yeo Y, Masini G, Caymax M, et al., editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2010. p. 799–812.
- MLA
- Witvrouw, Ann, Rita Van Hoof, George Bryce, et al. “SiGe MEMS Technology: a Platform Technology Enabling Different Demonstrators.” ECS Transactions. Ed. D Harame et al. Vol. 33. Pennington, NJ, USA: Electrochemical Society (ECS), 2010. 799–812. Print.
@inproceedings{1057335,
abstract = {In imec's 200mm fab a dedicated poly-SiGe above-IC MEMS (Micro Electro-Mechanical Systems) platform has been set up to integrate MEMS and its readout and driving electronics on one chip. In the Flemish project Gemini the possibilities of this platform have been further explored together with the project partners. Three different demonstrators were realized: mirrors for display applications, grating light valves (GLV) and accelerometers. Whereas the mirrors and GLVs are made with a similar to 300 nm thick SiGe structural layer plus optical coating, the SiGe structural layer thickness for the accelerometers is 4 mu m in order to improve the capacitive readout of in-plane devices. The processing and measurement results of these functional demonstrators are shown in this paper. These new demonstrators reconfirm the generic nature of the SiGe MEMS platform.},
author = {Witvrouw, Ann and Van Hoof, Rita and Bryce, George and Du Bois, Bert and Verbist, Agnes and Severi, Simone and Haspeslagh, Luc and Osman, Haris and De Coster, Jeroen and Wen, Lianggong and Puers, Robert and Beernaert, Roel and De Smet, Herbert and Rudra, Sukumar and Van Thourhout, Dries},
booktitle = {ECS Transactions},
editor = {Harame, D and Boquet, J and {\"O}stling, M and Yeo, Y and Masini, G and Caymax, M and Krishnamohan, T and Tillack, B and Bedell, S and Miyazaki, S and Reznicek, A and Koester, S},
issn = {1938-5862},
language = {eng},
location = {Las Vegas, NV, USA},
number = {6},
pages = {799--812},
publisher = {Electrochemical Society (ECS)},
title = {SiGe MEMS technology: a platform technology enabling different demonstrators},
url = {http://dx.doi.org/10.1149/1.3487610},
volume = {33},
year = {2010},
}
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