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Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX

Tamara Rudenko, Valeriya Kilchytska, Stéphane Burignat UGent, Jean-Pierre Raskin, François Andrieu, Olivier Faynot, A. Nazarov, V.-S. Lysenko and Denis Flandre (2009) Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings. p.111-112
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings
pages
111 - 112
publisher
Chalmers University of Technology
place of publication
Göteborg, Sweden
conference name
5th Workshop of the Thematic Network on Silicon-on-Insulator Technology Devices and Circuits (EUROSOI 2009)
conference location
Göteborg, Sweden
conference start
2009-01-19
conference end
2009-01-21
language
English
UGent publication?
no
classification
C1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1036642
handle
http://hdl.handle.net/1854/LU-1036642
date created
2010-09-03 14:05:19
date last changed
2017-01-02 09:52:18
@inproceedings{1036642,
  author       = {Rudenko, Tamara and Kilchytska, Valeriya and Burignat, St{\'e}phane and Raskin, Jean-Pierre and Andrieu, Fran\c{c}ois and Faynot, Olivier and Nazarov, A. and Lysenko, V.-S. and Flandre, Denis},
  booktitle    = {Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings},
  language     = {eng},
  location     = {G{\"o}teborg, Sweden},
  pages        = {111--112},
  publisher    = {Chalmers University of Technology},
  title        = {Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX},
  year         = {2009},
}

Chicago
Rudenko, Tamara, Valeriya Kilchytska, Stéphane Burignat, Jean-Pierre Raskin, François Andrieu, Olivier Faynot, A. Nazarov, V.-S. Lysenko, and Denis Flandre. 2009. “Transconductance and Mobility Behaviors in UTB SOI MOSFETs with Standard and Thin BOX.” In Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings, 111–112. Göteborg, Sweden: Chalmers University of Technology.
APA
Rudenko, Tamara, Kilchytska, V., Burignat, S., Raskin, J.-P., Andrieu, F., Faynot, O., Nazarov, A., et al. (2009). Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX. Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings (pp. 111–112). Presented at the 5th Workshop of the Thematic Network on Silicon-on-Insulator Technology Devices and Circuits (EUROSOI 2009), Göteborg, Sweden: Chalmers University of Technology.
Vancouver
1.
Rudenko T, Kilchytska V, Burignat S, Raskin J-P, Andrieu F, Faynot O, et al. Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX. Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings. Göteborg, Sweden: Chalmers University of Technology; 2009. p. 111–2.
MLA
Rudenko, Tamara, Valeriya Kilchytska, Stéphane Burignat, et al. “Transconductance and Mobility Behaviors in UTB SOI MOSFETs with Standard and Thin BOX.” Thematic Network on Silicon-on-Insulator Technology Devices and Circuits, 5th Workshop, Proceedings. Göteborg, Sweden: Chalmers University of Technology, 2009. 111–112. Print.