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Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1-xAs window on the sensitivity of a p(+)-n-n(+) GaAs solar cell to 1 MeV electron irradiation

(2009) RENEWABLE ENERGY. 34(11). p.2426-2431
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DAMAGE, SI, HETEROJUNCTION, SPACE, DEGRADATION, INDUCED DEFECTS, COMPUTER-ANALYSIS, Degradation, Defects, Electron irradiation, Solar cell, AlxGa1-xAs/GaAs

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Chicago
Meftah, AF, N Sengouga, AM Meftah, and Samira Khelifi. 2009. “Numerical Simulation of the Effect of the Al Molar Fraction and Thickness of an AlxGa1-xAs Window on the Sensitivity of a P(+)-n-n(+) GaAs Solar Cell to 1 MeV Electron Irradiation.” Renewable Energy 34 (11): 2426–2431.
APA
Meftah, A., Sengouga, N., Meftah, A., & Khelifi, S. (2009). Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1-xAs window on the sensitivity of a p(+)-n-n(+) GaAs solar cell to 1 MeV electron irradiation. RENEWABLE ENERGY, 34(11), 2426–2431.
Vancouver
1.
Meftah A, Sengouga N, Meftah A, Khelifi S. Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1-xAs window on the sensitivity of a p(+)-n-n(+) GaAs solar cell to 1 MeV electron irradiation. RENEWABLE ENERGY. 2009;34(11):2426–31.
MLA
Meftah, AF, N Sengouga, AM Meftah, et al. “Numerical Simulation of the Effect of the Al Molar Fraction and Thickness of an AlxGa1-xAs Window on the Sensitivity of a P(+)-n-n(+) GaAs Solar Cell to 1 MeV Electron Irradiation.” RENEWABLE ENERGY 34.11 (2009): 2426–2431. Print.
@article{1026788,
  author       = {Meftah, AF and Sengouga, N and Meftah, AM and Khelifi, Samira},
  issn         = {0960-1481},
  journal      = {RENEWABLE ENERGY},
  keyword      = {DAMAGE,SI,HETEROJUNCTION,SPACE,DEGRADATION,INDUCED DEFECTS,COMPUTER-ANALYSIS,Degradation,Defects,Electron irradiation,Solar cell,AlxGa1-xAs/GaAs},
  language     = {eng},
  number       = {11},
  pages        = {2426--2431},
  title        = {Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1-xAs window on the sensitivity of a p(+)-n-n(+) GaAs solar cell to 1 MeV electron irradiation},
  url          = {http://dx.doi.org/10.1016/j.renene.2009.03.013},
  volume       = {34},
  year         = {2009},
}

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