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Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures

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Keywords
EQUATIONS, POISSON, EXTRACTION, SCHRODINGER, OXIDES, SELF-CONSISTENT SOLUTION, TUNNELING PARAMETERS

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MLA
Croci, S, C Plossu, Stéphane Burignat, et al. “Capacitance and Current-voltage Simulation of EEPROM Technology Highly Doped MOS Structures.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 14.5-7 (2003): 311–314. Print.
APA
Croci, S., Plossu, C., Burignat, S., & Boivin, P. (2003). Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 14(5-7), 311–314. Presented at the 4th International Conference on Materials for Microelectronics and Nanoengineering.
Chicago author-date
Croci, S, C Plossu, Stéphane Burignat, and P Boivin. 2003. “Capacitance and Current-voltage Simulation of EEPROM Technology Highly Doped MOS Structures.” Journal of Materials Science-materials in Electronics 14 (5-7): 311–314.
Chicago author-date (all authors)
Croci, S, C Plossu, Stéphane Burignat, and P Boivin. 2003. “Capacitance and Current-voltage Simulation of EEPROM Technology Highly Doped MOS Structures.” Journal of Materials Science-materials in Electronics 14 (5-7): 311–314.
Vancouver
1.
Croci S, Plossu C, Burignat S, Boivin P. Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2003;14(5-7):311–4.
IEEE
[1]
S. Croci, C. Plossu, S. Burignat, and P. Boivin, “Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 14, no. 5–7, pp. 311–314, 2003.
@article{1026557,
  author       = {Croci, S and Plossu, C and Burignat, Stéphane and Boivin, P},
  issn         = {0957-4522},
  journal      = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
  keywords     = {EQUATIONS,POISSON,EXTRACTION,SCHRODINGER,OXIDES,SELF-CONSISTENT SOLUTION,TUNNELING PARAMETERS},
  language     = {eng},
  location     = {Espoo, Finland},
  number       = {5-7},
  pages        = {311--314},
  title        = {Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures},
  url          = {http://dx.doi.org/10.1023/A:1023919811012},
  volume       = {14},
  year         = {2003},
}

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